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  • 1
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    Stellar Gyroscope for Determining Attitude of a Spacecraft (2005)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: A paper introduces the concept of a stellar gyroscope, currently at an early stage of development, for determining the attitude or spin axis, and spin rate of a spacecraft. Like star trackers, which are commercially available, a stellar gyroscope would capture and process images of stars to determine the orientation of a spacecraft in celestial coordinates. Star trackers utilize chargecoupled devices as image detectors and are capable of tracking attitudes at spin rates of no more than a few degrees per second and update rates typically 〈5 Hz. In contrast, a stellar gyroscope would utilize an activepixel sensor as an image detector and would be capable of tracking attitude at a slew rate as high as 50 deg/s, with an update rate as high as 200 Hz. Moreover, a stellar gyroscope would be capable of measuring a slew rate up to 420 deg/s. Whereas a Sun sensor and a three-axis mechanical gyroscope are typically needed to complement a star tracker, a stellar gyroscope would function without them; consequently, the mass, power consumption, and mechanical complexity of an attitude-determination system could be reduced considerably.
    Keywords: Spacecraft Instrumentation and Astrionics
    Type: NPO-30481 , NASA Tech Briefs, October 2005; 33
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  • 2
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    Lower-Dark-Current, Higher-Blue-Response CMOS Imagers (2008)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: Several improved designs for complementary metal oxide/semiconductor (CMOS) integrated-circuit image detectors have been developed, primarily to reduce dark currents (leakage currents) and secondarily to increase responses to blue light and increase signal-handling capacities, relative to those of prior CMOS imagers. The main conclusion that can be drawn from a study of the causes of dark currents in prior CMOS imagers is that dark currents could be reduced by relocating p/n junctions away from Si/SiO2 interfaces. In addition to reflecting this conclusion, the improved designs include several other features to counteract dark-current mechanisms and enhance performance.
    Keywords: Electronics and Electrical Engineering
    Type: NPO-41224 , NASA Tech Briefs, August 2008; 14-15
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  • 3
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    Dual-Photoelastic-Modulator-Based Polarimetric Imaging Concept for Aerosol Remote Sensing (2007)
    In:  Other Sources
    Details
    Publication Date: 2019-08-27
    Description: A dual-photoelastic-modulator- (PEM-) based spectropolarimetric camera concept is presented as an approach for global aerosol monitoring from space. The most challenging performance objective is to measure degree of linear polarization (DOLP) with an uncertainty of less than 0.5% in multiple spectral bands, at moderately high spatial resolution, over a wide field of view, and for the duration of a multiyear mission. To achieve this, the tandem PEMs are operated as an electro-optic circular retardance modulator within a high-performance reflective imaging system. Operating the PEMs at slightly different resonant frequencies generates a beat signal that modulates the polarized component of the incident light at a much lower heterodyne frequency. The Stokes parameter ratio q = Q/I is obtained from measurements acquired from each pixel during a single frame, providing insensitivity to pixel responsivity drift and minimizing polarization artifacts that conventionally arise when this quantity is derived from differences in the signals from separate detectors. Similarly, u = U/I is obtained from a different pixel; q and u are then combined to form the DOLP. A detailed accuracy and tolerance analysis for this polarimeter is presented.
    Keywords: Earth Resources and Remote Sensing
    Type: Applied Optics; 46; 35; 8428-8445
    Format: text
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  • 4
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    A back-illuminated megapixel CMOS image sensor (2005)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.
    Keywords: Electronics and Electrical Engineering
    Type: IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors; Jun 09, 2005 - Jun 11, 2005; Karuizawa; Japan
    Format: text
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  • 5
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    Polarimetric Imaging using Two Photoelastic Modulators (2009)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: A method of polarimetric imaging, now undergoing development, involves the use of two photoelastic modulators in series, driven at equal amplitude but at different frequencies. The net effect on a beam of light is to cause (1) the direction of its polarization to rotate at the average of two excitation frequencies and (2) the amplitude of its polarization to be modulated at the beat frequency (the difference between the two excitation frequencies). The resulting modulated optical light beam is made to pass through a polarizing filter and is detected at the beat frequency, which can be chosen to equal the frame rate of an electronic camera or the rate of sampling the outputs of photodetectors in an array. The method was conceived to satisfy a need to perform highly accurate polarimetric imaging, without cross-talk between polarization channels, at frame rates of the order of tens of hertz. The use of electro-optical modulators is necessitated by a need to obtain accuracy greater than that attainable by use of static polarizing filters over separate fixed detectors. For imaging, photoelastic modulators are preferable to such other electrio-optical modulators as Kerr cells and Pockels cells in that photoelastic modulators operate at lower voltages, have greater angular acceptances, and are easier to use. Prior to the conception of the present method, polarimetric imaging at frame rates of tens of hertz using photoelastic modulators was not possible because the resonance frequencies of photoelastic modulators usually lie in the range from about 20 to about 100 kHz.
    Keywords: Optics
    Type: NPO-43806 , NASA Tech Briefs, May 2009; 29
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  • 6
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    Synchronous Phase-Resolving Flash Range Imaging (2007)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: An apparatus, now undergoing development, for range imaging based on measurement of the round-trip phase delay of a pulsed laser beam is described. The apparatus would operate in a staring mode. A pulsed laser would illuminate a target. Laser light reflected from the target would be imaged on a verylarge- scale integrated (VLSI)-circuit image detector, each pixel of which would contain a photodetector and a phase-measuring circuit. The round-trip travel time for the reflected laser light incident on each pixel, and thus the distance to the portion of the target imaged in that pixel, would be measured in terms of the phase difference between (1) the photodetector output pulse and (2) a local-oscillator signal that would have a frequency between 10 and 20 MHz and that would be synchronized with the laser-pulse-triggering signal.
    Keywords: Lasers and Masers
    Type: NPO-40811 , NASA Tech Briefs, May 2007; 11-12
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  • 7
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    Improved Signal Chains for Readout of CMOS Imagers (2009)
    In:  CASI
    Details
    Publication Date: 2019-07-12
    Description: An improved generic design has been devised for implementing signal chains involved in readout from complementary metal oxide/semiconductor (CMOS) image sensors and for other readout integrated circuits (ICs) that perform equivalent functions. The design applies to any such IC in which output signal charges from the pixels in a given row are transferred simultaneously into sampling capacitors at the bottoms of the columns, then voltages representing individual pixel charges are read out in sequence by sequentially turning on column-selecting field-effect transistors (FETs) in synchronism with source-follower- or operational-amplifier-based amplifier circuits. The improved design affords the best features of prior source-follower-and operational- amplifier-based designs while overcoming the major limitations of those designs. The limitations can be summarized as follows: a) For a source-follower-based signal chain, the ohmic voltage drop associated with DC bias current flowing through the column-selection FET causes unacceptable voltage offset, nonlinearity, and reduced small-signal gain. b) For an operational-amplifier-based signal chain, the required bias current and the output noise increase superlinearly with size of the pixel array because of a corresponding increase in the effective capacitance of the row bus used to couple the sampled column charges to the operational amplifier. The effect of the bus capacitance is to simultaneously slow down the readout circuit and increase noise through the Miller effect.
    Keywords: Man/System Technology and Life Support
    Type: NPO-42006 , NASA Tech Briefs, March 2009; 34 - 35
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  • 8
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    Increasing the dynamic range of CMOS photodiode imagers (2007)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A multiple-step reset process and circuit for resetting a voltage stored on a photodiode of an imaging device. A first stage of the reset occurs while a source and a drain of a pixel source-follower transistor are held at ground potential and the photodiode and a gate of the pixel source-follower transistor are charged to an initial reset voltage having potential less that of a supply voltage. A second stage of the reset occurs after the initial reset voltage is stored on the photodiode and the gate of the pixel source-follower transistor and the source and drain voltages of the pixel source-follower transistor are released from ground potential thereby allowing the source and drain voltages of the pixel source-follower transistor to assume ordinary values above ground potential and resulting in a capacitive feed-through effect that increases the voltage on the photodiode to a value greater than the initial reset voltage.
    Keywords: Electronics and Electrical Engineering
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  • 9
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    Use of Photoelastic Modulators for High-accuracy Spectropolarimetric Imaging of Aerosols (2006)
    In:  Other Sources
    Details
    Publication Date: 2019-07-13
    Description: Passive multiangular, multispectral, and polarimetric sensing approaches each have unique strengths for the measurement of tropospheric aerosol column abundances and microphysical properties. Current spaceborne multispectral and multiangular aerosols sensors operate at approximately 1 km resolution. Under NASA's Instrument Incubator Program, we are developing an electro-optic imaging approach that will enable adding high-accuracy polarimetry to such observations. To achieve a degree of linear polarization (DOLP) uncertainty of 0.5%, our approach temporally modulates the linear-polarization component of incoming light at a rapid rate, enabling each detector within a focal-plane array, combined with polarization analyzers, to measure the relative proportions of the linear Stokes components Q or U to the total intensity. Our system uses tandem photoelastic modulators (PEMs) within a high-reflectance, low diattenuation camera design. The two PEMs vibrate at slightly different resonant frequencies, leading to modulation of the polarized light at a heterodyne frequency of ~25 Hz. High-speed (1 kHz) readout of the detector arrays samples the output waveforms from which Q/I and U/I are derived. We report on experimental and theoretical analyses of PEM and optical system performance, along with plans for developing ruggedized PEMs capable of withstanding launch and on-orbit stresses.
    Keywords: Optics
    Type: 2006 Earth Science Technology Conference (ESTC-06)2006; Jun 26, 2006; College Park, MD; United States
    Format: text
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