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    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 3151-3156 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The growth of TiNi thin films by ion beam sputter deposition using a Kaufmann type ionsource is described. Argon ions are used to sputter separate Ti and Ni targets to deposit nearequiatomicTiNi thin films. Typically, ion energies and current densities of 1500 eV and 1 mA cm-2respectively are used, with an argon overpressure of around 0.05 mtorr, to achieve deposition ratesof order 1 μm hr-1. The thermophysical properties of the deposited films were investigated bythermal imaging. Patterning of TiNi films and foils with micrometre resolution using KrF excimerlaser ablation at 248 nm wavelength, with beam fluence up to 2.5 J cm-2, 15 ns pulse duration andpulse rates up to 100 Hz has also been investigated
    Type of Medium: Electronic Resource
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