ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report the self-assembled growth of Ge islands of different shapes and sizes on p-Si(001) by r.f. magnetron sputtering by varying the r.f. power, growth temperature and postdepositionannealing condition. The well known Stranski-Krastanov growth mechanism due tolattice mismatch between Si & Ge leads to the formation of Ge islands, similar to a moresophisticated MBE growth, albeit at a much higher pressure in our study. Ge nanocrystalsembedded in SiO2 matrix have also been grown. Optical properties of nanocrystals exhibitingvisible luminescence at room temperature are presented
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.89.pdf
Permalink