ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
Electronic grade diamond is usually grown by Microwave Plasma assisted CVD froma hydrogen rich CH4/H2 mixture, hence hydrogen is likely to be incorporated during growth. Itmay thus affect the properties of the material. In this work, we present the state of the art on theunderstanding of the diffusion properties of hydrogen and of the hydrogen-dopant interactions indiamond. First, we show the existence of strong interactions between H and boron dopants indiamond. The formation of H-acceptor pairs results in the passivation of the acceptors. Further,we show that an excess of hydrogen in selected boron-doped diamond epitaxial layers can resultin the creation of H and boron-containing donors with a ionization energy of 0.36 eV (about halfthe ionization energy of phosphorus). At 300 K, the n-type conductivity of hydrogenated borondopeddiamond is several orders of magnitude higher than the conductivity of phosphorus-dopeddiamond. The formation process of these new donors is discussed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.46.63.pdf
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