ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Growth of thick epitaxial SiC layers needed for high power devices is presented forhorizontal hot-wall CVD (HWCVD) reactors. We demonstrate thickness of epilayer of 100 μm andmore with good morphology, low-doping with no doping variation through the whole thick layerand reasonable carrier lifetime which mainly depends on the substrate quality. Typical epidefectsare described and their density can dramatically be reduced when choosing correctly the growthconditions as well as the polishing of the surface prior to the growth. The control of the doping andthickness uniformities as well as the run-to-run reproducibility is also presented. Variouscharacterization techniques such as optical microscopy, AFM, reflectance, CV, PL and minoritycarrier lifetime have been used. Results of high-voltage SiC Schottky power devices are presented
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.47.pdf
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