Publikationsdatum:
2014-06-17
Beschreibung:
We report the bi-epitaxial growth of ZnO and resistance switching characteristics of Pt/ZnO/TiN-based heterojunction devices fabricated on Si(001) substrates by pulsed laser deposition. The structural properties of the heterostructures characterized by XRD (θ-2θ, φ scans) and TEM confirm that the ZnO films having hexagonal wurtzite structure (six-fold symmetry) grow bi-epitaxially on the TiN buffer layer (four-fold symmetry). The Pt(111) grows epitaxially on ZnO(0001). The epitaxial relationship between the various films is given as (111) Pt ‖ (0001) ZnO ‖ (001) TiN ‖ (001) Si and [100] TiN ‖ [100] Si , [ 2 1 ¯ 1 ¯ 0 ] ZnO ‖ [110] TiN or [ 10 1 ¯ 0 ] ZnO ‖ [ 110 ] TiN , and [ 10 1 ¯ ] Pt ‖ [ 2 1 ¯ 1 ¯ 0 ] ZnO . The effect of ZnO growth temperature on the electrical properties of Pt/ZnO/TiN devices is studied and correlated with the microstructure of the ZnO/TiN interface. The Pt/ZnO/TiN devices exhibited good bi-polar resistance switching characteristics at voltages as low as ±1 V.
Print ISSN:
0021-8979
Digitale ISSN:
1089-7550
Thema:
Physik
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