Publication Date:
2014-11-09
Description:
Article The use of chalcogenide glasses in simple electronic devices, such as a p-n junction, is hindered by the lack of n-type material. Here, Hughes et al. demonstrate n-type doping of GeTe and GaLaSO amorphous films using bismuth-ion implantation. Nature Communications doi: 10.1038/ncomms6346 Authors: Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour, Jin Yao, Tae-Hoon Lee, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Daniel W. Hewak, Stephen R. Elliott, Richard J. Curry
Electronic ISSN:
2041-1723
Topics:
Biology
,
Chemistry and Pharmacology
,
Natural Sciences in General
,
Physics
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