Publication Date:
2011-06-25
Description:
Author(s): J. Łusakowski, R. Buczko, K.-J. Friedland, and R. Hey Photoluminescence (PL) measurements were carried out on a Be-acceptor δ -doped GaAs/Al 0.33 Ga 0.67 As heterostructure at 1.6 K at magnetic fields up to 5 T. The studied PL originated from the recombination of free electrons in a two-dimensional electron gas with holes captured on Be acceptors. The elect... [Phys. Rev. B 83, 245313] Published Fri Jun 24, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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