Publikationsdatum:
2011-09-15
Beschreibung:
Bi-based perovskite-type oxide materials such as BiFeO 3 (BFO) and the related compounds receive much attention and have been developed actively as important candidates for Pb-free ferroelectric / piezoelectric materials instead of toxic Pb-based perovskite oxide materials. Recently, many researches have been reported for thin films of BFO by various film-deposition techniques for actual application of semiconductive devices, microactuators, etc. In this report, we tried preferential crystal growth of BFO films on semiconductive silicon substrates using uniaxial-(100)-oriented LaNiO 3 (LNO) buffer layer. BFO films were fabricated via chemical solution deposition (CSD) technique on platinized silicon wafer [(111)Pt/TiO 2 /(100)Si] and (100)LNO-coated platinized silicon [(100)LNO/(111)Pt/TiO 2 /(100)Si] substrates. XRD analysis indicated that the films fabricated on (111)Pt/TiO 2 /(100)Si substrate consisted of randomly-oriented BFO c...
Print ISSN:
1757-8981
Digitale ISSN:
1757-899X
Thema:
Maschinenbau
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