Publication Date:
2017-01-18
Description:
Author(s): J. S. Embley, J. S. Colton, K. G. Miller, M. A. Morris, M. Meehan, S. L. Crossen, B. D. Weaver, E. R. Glaser, and S. G. Carter We report T 2 spin coherence times for electronic states localized in Si vacancies in 4 H − SiC . Our spin coherence study included two SiC samples that were irradiated with 2 MeV protons at different fluences ( 10 13 and 10 14 c m − 2 ) in order to create samples with unique defect concentrations. Using optical… [Phys. Rev. B 95, 045206] Published Tue Jan 17, 2017
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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