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  • Articles  (96)
  • 2015-2019  (10)
  • 2010-2014  (7)
  • 1985-1989  (54)
  • 1980-1984  (25)
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  • 1
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 20 (1981), S. 1020-1025 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3833-3837 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft carbonized layers prepared in a glow discharge, with a hydrogen concentration of H:C∼4/3, are exposed to helium ion bombardment at energies between 0.3 and 2.6 MeV. A strong ion-induced depletion of up to 3×103 H atoms per incident 4He+ ion is observed by means of high-energy ion beam analysis. The hydrogen release is shown to be a local process, with the electronic energy deposition as the main responsible mechanism. The results are successfully compared to a model which takes into account local bond breaking and retrapping and the local formation of hydrogen molecules.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1893-1897 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 10-keV deuterium implanted in nickel were obtained during implantation through elastic recoil detection between 233 and 313 K. The profiles were allowed to reach saturation at each measured temperature. At the lowest temperature, measurements with various implantation fluxes were performed. Aside from surface peaks, the depth profiles show a uniform density of deuterium in the implanted layer and the shape of these profiles is independent of the sample temperature or implantation fluence or flux. The temperature and fluence dependence could be successfully reproduced with a trapping-detrapping model considering three different trap binding energies. Two of the model parameters are in good agreement with previous calculations performed to reproduce reemission measurements.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3400-3406 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high-temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He+ Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1019 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-oriented C substrates. Using the Monte Carlo code trim, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With the depth distributions of defect production generated by trim as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modeled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4860-4866 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new theoretical framework has been developed which is applicable to the implantation and ion-induced release of hydrogen isotopes in graphite. It provides a physical basis and a refinement of the predictions of the simple model of local saturation and mixing. The model treats the trapping at defects and a local release of trapped atoms by nuclear knock-on. Ion deposition and damage functions are taken from trim simulations. The detrapped atoms may become retrapped or recombine to molecules, which then are transported to the surface by fast molecular diffusion, and subsequently released. By the choice of suitable rate constants in the model calculations, different experimental findings for the implantation and high-fluence self-reemission of deuterons in graphite may be explained consistently. Examples cover the saturation as a function of temperature and energy, depth profiles, gas reemission, thermal desorption, and effects of predamage.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2733-2738 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The permeation of 2–22-keV deuterons implanted into 25-μm-thick cold-rolled Ni foils was studied near room temperature. The results are generally characterized by a time lag τ and a steady-state permeation rate J. The variation of τ with beam intensity and temperature indicates an average relative concentration of ∼4×10−4 of saturable bulk traps of binding energy 0.26±0.01 eV, plus a larger concentration of weaker traps. At the highest energy, J is well described by theory.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2225-2226 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic spectra of light emission from CH molecules and hydrogen atoms sputtered from hydrogen-implanted graphite are observed. The relative intensities from both species vary with the implanted fluence. The CH yield remains constant while the Hα yield increases. This is consistent with two binding states of implanted hydrogen in graphite.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 27 (1982), S. 19-29 
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 61.70.Wp ; 61.80.Jh.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Deuterons of 10 keV energy and protons with the same mean projected range have been implanted into several metals at a temperature of approximately 35 K and at dose rates of approximately 2 × 1014 cm−2 s−1. The amount of retained deuterium saturates at fluences larger than roughly 2 × 1018 cm−2. After implantation of deuterons and subsequent bombardment with protons, the deuteron depth profiles show characteristic double peak structures, which indicate a replacement process. The experimental data are in good agreement with a simple model of local saturation and mixing. The possible implications of this model are discussed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of thermal analysis and calorimetry 30 (1985), S. 383-389 
    ISSN: 1572-8943
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Zusammenfassung Mit Hilfe des Mikro-Thermoanalysators und des Wärmeflußcalorimeters DSC 111 der Fa. Setaram wurden die Entropien für den Phasenübergang Chalcopyrit-Zinkblende von AIBIIIC 2 VI - und AIIBIVC 2 V -Verbindungen bestimmt. Aus diesen Experimenten kann nicht geschlossen werden, welche Ordnung der Übergang besitzt. In der Diskussion wird jedoch gezeigt, daß ein Übergang erster Ordnung wahrscheinlich ist. Eine einfache Korrelation zwischen dem Gitterkonstantenverhältnis, extrapoliert bis zum Schmelzpunkt und der auf den Schmelzpunkt reduzierten Umwandlungstemperatur gestattet die Vorhersage von Phasenumwandlungen.
    Abstract: Резюме С помощью микротермо анализатора Сетарам и ДСК 111с тепловым потоком было определено изме нение энтропии при фа зовом переходе типа халько пирит-сфалерит для соединений АIBIIIC 2 VI и АIBIVC 2 V . На основе полученных результа тов не представилось возможным установит ь порядок перехода, но в обсуждении указывае тся как на переход первого порядка. На ос нове простой корреля ции между отношением постоянн ых решетки, экстраполированных до температуры плавл ения, и приведенной темпера турой фазового перехода, можно устан овить степень разупо рядочения.
    Notes: Abstract The entropy change of the phase transition from the chalcopyrite to the sphalerite structure of compounds AIBIIIC 2 VI and AIIBIVC 2 V was determined with a Setaram Microthermalanalyzer and a DSC 111 heat flow calorimeter. From these results one can not generally decide the order of the phenomenon, but the discussion gives hints as to a first-order transition. On the basis of a simple correlation between the ratio of the lattice constants extrapolated up to the melting temperature and the reduced temperature of the phase transition, it is possible to predict the order disorder behaviour.
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