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  • Blackwell Publishing Ltd
  • American Institute of Physics (AIP)
  • 2015-2019  (9)
  • 1
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    Acoustic travel time gauges for in-situ determination of pressure and temperature in multi-anvil apparatus (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-08-11
    Description: In this study, we developed a new method for in-situ pressure determination in multi-anvil, high-pressure apparatus using an acoustic travel time approach within the framework of acoustoelasticity. The ultrasonic travel times of polycrystalline Al 2 O 3 were calibrated against NaCl pressure scale up to 15 GPa and 900 °C in a Kawai-type double-stage multi-anvil apparatus in conjunction with synchrotron X-radiation, thereby providing a convenient and reliable gauge for pressure determination at ambient and high temperatures. The pressures derived from this new travel time method are in excellent agreement with those from the fixed-point methods. Application of this new pressure gauge in an offline experiment revealed a remarkable agreement of the densities of coesite with those from the previous single crystal compression studies under hydrostatic conditions, thus providing strong validation for the current travel time pressure scale. The travel time approach not only can be used for continuous in-situ pressure determination at room temperature, high temperatures, during compression and decompression, but also bears a unique capability that none of the previous scales can deliver, i.e., simultaneous pressure and temperature determination with a high accuracy (±0.16 GPa in pressure and ±17 °C in temperature). Therefore, the new in-situ Al 2 O 3 pressure gauge is expected to enable new and expanded opportunities for offline laboratory studies of solid and liquid materials under high pressure and high temperature in multi-anvil apparatus.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Phase structure–electrical property relationships in Pb(Ni1/3Nb2/3)O3–Pb(Zr,Ti)O3-based ceramics (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-04-01
    Description: Generally, the phase structure change of Pb(B′ B″)O 3 –PZT solid solutions near a morphotropic phase boundary (MPB) can be originated from composition variations. Here our results show that the excess PbO and the sintering temperature can also result in the ferroelectric phase structure change in the Pb(Ni 1/3 Nb 2/3 )O 3 –Pb(Zr,Ti)O 3 (PNN–PZT)-based ceramics near the MPB. The dielectric, piezoelectric, and ferroelectric properties are dependent on the tetragonal phase content ( TP ) which is closely associated with the excess PbO and the sintering temperature. The temperature dependence of the polarization ( P )–electric field ( E ) hysteresis loops reveals that the tetragonal phase in the PNN–PZT-based ceramics has a lower activation energy ( E a ) for domain wall movement than that of the rhombohedral phase, thus resulting in easier polarization rotation. This is responsible for the phase structure–electrical property relationships in the PNN–PZT-based ceramics, exhibiting the dependence of the tetragonal phase content ( TP ) on the electrical properties.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Higher regularity of global attractors of a weakly dissipative fractional Korteweg de Vries equation (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-12-29
    Description: In this paper, we study the long time behavior of solutions to a weakly dissipative fractional Korteweg de Vries (KdV) equation on the real line R . The main difficulty lies in that the dissipative term is a nonlocal operator. We overcome this difficulty by the commutator estimates and product estimates associated with fractional Laplacian. The asymptotical compactness of solution semigroup is proved by the tail estimates. Finally, we conclude the existence of ( H 2 ( R ), H 5 ( R )) global attractor of the weakly dissipative fractional KdV equation.
    Print ISSN: 0022-2488
    Electronic ISSN: 1089-7658
    Topics: Mathematics , Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Dual-wavelength polymer laser based on an active/inactive/active sandwich-like structure (2016)
    American Institute of Physics (AIP)
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    Publication Date: 2016-09-09
    Description: Dual-wavelength laser emission is achieved by using an active/inactive/active sandwich-like structure, which can be conveniently fabricated using spin coating technique. Poly [(9, 9-dioctylfluorenyl-2, 7-diyl)-alt-co-(1, 4-benzo-(2, 1′, 3) -thiadiazole)] and polyvinyl alcohol are employed as the active and the inactive materials, respectively. Two laser wavelengths are simultaneously observed, which are attributed to the difference of the surrounding refractive index of two active waveguides in the sandwich-like structure. Each wavelength is controlled by the respective waveguide structure, meaning that multi-wavelength laser can be designed by stacking the active/inactive layer pair. These results provide more flexibility to design compact laser sources.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    The interaction between hexagonal boron nitride and water from first principles (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-06-17
    Description: The use of hexagonal boron nitride (h-BN) in microfluidic and nanofluidic applications requires a fundamental understanding of the interaction between water and the h-BN surface. A crucial component of the interaction is the binding energy, which is sensitive to the treatment of electron correlation. In this work, we use state of the art quantum Monte Carlo and quantum chemistry techniques to compute the binding energy. Compared to high-level many-body theory, we found that the second-order Møller-Plesset perturbation theory captures the interaction accurately and can thus be used to develop force field parameters between h-BN and water for use in atomic scale simulations. On the contrary, density functional theory with standard dispersion corrections tends to overestimate the binding energy by approximately 75%.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
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  • 6
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    Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-09-22
    Description: Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p -type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/ f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/ f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ∼1 kHz and the normalized detectivity is calculated to be 1.2 × 10 9  cm Hz 1/2  W −1 . These results provide important insights for the future integration of graphene with silicon device technology.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Hexagonal boron nitride and water interaction parameters (2016)
    American Institute of Physics (AIP)
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    Publication Date: 2016-04-29
    Description: The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    X-ray imaging for studying behavior of liquids at high pressures and high temperatures using Paris-Edinburgh press (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-07-24
    Description: Several X-ray techniques for studying structure, elastic properties, viscosity, and immiscibility of liquids at high pressures have been integrated using a Paris-Edinburgh press at the 16-BM-B beamline of the Advanced Photon Source. Here, we report the development of X-ray imaging techniques suitable for studying behavior of liquids at high pressures and high temperatures. White X-ray radiography allows for imaging phase separation and immiscibility of melts at high pressures, identified not only by density contrast but also by phase contrast imaging in particular for low density contrast liquids such as silicate and carbonate melts. In addition, ultrafast X-ray imaging, at frame rates up to ∼10 5 frames/second (fps) in air and up to ∼10 4 fps in Paris-Edinburgh press, enables us to investigate dynamics of liquids at high pressures. Very low viscosities of melts similar to that of water can be reliably measured. These high-pressure X-ray imaging techniques provide useful tools for understanding behavior of liquids or melts at high pressures and high temperatures.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 9
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    Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-12-01
    Description: Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p -type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77–300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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