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  • 1
    Publication Date: 2016-04-08
    Description: With the aim of gaining a better physical insight into linear regimes in gyrotrons, a new linear model was developed. This model is based on a spectral approach for solving the self-consistent system of equations describing the wave-particle interaction in the cavity of a gyrotron oscillator. Taking into account the wall-losses self-consistently and including the main system inhomogeneities in the cavity geometry and in the magnetic field, the model is appropriate to consider real system parameters. The main advantage of the spectral approach, compared with a time-dependent approach, is the possibility to describe all of the stable and unstable modes, respectively, with negative and positive growth rates. This permits to reveal the existence of a new set of eigenmodes, in addition to the usual eigenmodes issued from cold-cavity modes. The proposed model can be used for studying other instabilities such as, for instance, backward waves potentially excited in gyrotron beam tunnels.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 2
    Publication Date: 2016-06-04
    Description: The geometrical and electronic structures of ScSi 3 −/0 clusters have been studied with the B3LYP, CCSD(T), and CASPT2 methods. The ground state of the anionic cluster was evaluated to be the 1 A 1 of rhombic η 2 -(Si 3 )Sc − isomer, whereas that of the neutral cluster was computed to be the 2 A 1 of the same isomer. All features in the 266 and 193 nm photoelectron spectra of ScSi 3 − cluster were interpreted by the one- and two-electron detachments from the 1 A 1 of rhombic η 2 -(Si 3 )Sc − isomer. The Franck-Condon factor simulation results show that the first broad band starting at 1.78 eV in the spectra comprises several vibrational progression peaks of two totally symmetric modes with the corresponding frequencies of 296 and 354 cm −1 .
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
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  • 3
    Publication Date: 2015-06-30
    Description: A new gyrotron simulation code for simulating the beam-wave interaction using a monomode time-dependent self-consistent model is presented. The new code TWANG-PIC is derived from the trajectory-based code TWANG by describing the electron motion in a gyro-averaged one-dimensional Particle-In-Cell (PIC) approach. In comparison to common PIC-codes, it is distinguished by its computation speed, which makes its use in parameter scans and in experiment interpretation possible. A benchmark of the new code is presented as well as a comparative study between the two codes. This study shows that the inclusion of a time-dependence in the electron equations, as it is the case in the PIC-approach, is mandatory for simulating any kind of non-stationary oscillations in gyrotrons. Finally, the new code is compared with experimental results and some implications of the violated model assumptions in the TWANG code are disclosed for a gyrotron experiment in which non-stationary regimes have been observed and for a critical case that is of interest in high power gyrotron development.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
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  • 4
    Publication Date: 2015-05-28
    Description: This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25–200 °C) of the phase transformation behavior of diamond cubic (dc) silicon at the nanoscale. Along with in situ indentation and electrical data, ex situ characterizations, such as Raman and cross-sectional transmission electron microscopy, have been used to reveal the indentation-induced deformation mechanisms. We find that phase transformation and defect propagation within the crystal lattice are not mutually exclusive deformation processes at elevated temperature. Both can occur at temperatures up to 150 °C but to different extents, depending on the temperature and loading conditions. For nanoindentation, we observe that phase transformation is dominant below 100 °C but that deformation by twinning along {111} planes dominates at 150 °C and 200 °C. This work, therefore, provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nanoscale and helps to clarify previous inconsistencies in the literature.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 5
    Publication Date: 2016-07-19
    Description: Accurate and efficient empirical potential energy models that describe the atomistic interactions between water molecules in the liquid phase are essential for computer simulations of many problems in physics, chemistry, and biology, especially when long length or time scales are important. However, while models with non-polarizable partial charges at four or five sites in a water molecule give remarkably good values for certain properties, deficiencies have been noted in other properties and increasing the number of sites decreases computational efficiency. An alternate approach is to utilize a multipole expansion of the electrostatic potential due to the molecular charge distribution, which is exact outside the charge distribution in the limits of infinite distances or infinite orders of multipoles while partial charges are a qualitative representation of electron density as point charges. Here, a single-site multipole model of water is presented, which is as fast computationally as three-site models but is also more accurate than four- and five-site models. The dipole, quadrupole, and octupole moments are from quantum mechanical–molecular mechanical calculations so that they account for the average polarization in the liquid phase, and represent both the in-plane and out-of-plane electrostatic potentials of a water molecule in the liquid phase. This model gives accurate thermodynamic, dynamic, and dielectric properties at 298 K and 1 atm, as well as good temperature and pressure dependence of these properties.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
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  • 6
    Publication Date: 2016-03-05
    Description: Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E V  + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10 14  cm −2 , a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E C – 0.12 eV) and T2 (E C – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10 −3  cm −1 and 0.9 cm −1 , respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 7
    Publication Date: 2016-04-07
    Description: Free boundary magnetohydrodynamic equilibrium states with spontaneous three dimensional deformations of the plasma-vacuum interface are computed for the first time. The structures obtained have the appearance of saturated ideal external kink/peeling modes. High edge pressure gradients yield toroidal mode number n  = 1 corrugations for a high edge bootstrap current and larger n distortions when this current is small. Deformations in the plasma boundary region induce a nonaxisymmetric Pfirsch-Schlüter current driving a field-aligned current ribbon consistent with reported experimental observations. A variation in the 3D equilibrium confirms that the n  = 1 mode is a kink/peeling structure. We surmise that our calculated equilibrium structures constitute a viable model for the edge harmonic oscillations and outer modes associated with a quiescent H-mode operation in shaped tokamak plasmas.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
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  • 8
    Publication Date: 2015-07-09
    Description: The exchange bias (EB) effect has been observed in magnetic Bi 0.9 Gd 0.1 Fe 0.9 Ti 0.1 O 3 nanoparticles. The influence of magnetic field cooling on the exchange bias effect has also been investigated. The magnitude of the exchange bias field ( H EB ) increases with the cooling magnetic field, showing that the strength of the exchange bias effect is tunable by the field cooling. The H EB values are also found to be dependent on the temperature. This magnetically tunable exchange bias obtained at temperatures up to 250 K in Bi 0.9 Gd 0.1 Fe 0.9 Ti 0.1 O 3 nanoparticles may be worthwhile for potential applications.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
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  • 9
    Publication Date: 2015-03-27
    Description: Magnetic and structural properties of Co/Pt multilayers with varying Co ( t Co ) and Pt ( t Pt ) thickness grown on various seed layers have been examined. It is challenging to grow Co/Pt multilayers as a top electrode with high perpendicular magnetic anisotropy (PMA) for magnetic tunnel junctions which usually comprise of CoFeB/MgO/CoFeB. We show that a thicker Pt layer of 1.2 nm is necessary to attain effective anisotropy ( K eff ) up to 0.14 MJ/m 3 . On the other hand, Co/Pt multilayers with high PMA have been achieved for proper textured seed layers of Ru and Pt. In the case of Ru seed layer, a higher K eff  = 0.45 MJ/m 3 can be achieved for t Co  = 0.5 nm and t Pt  = 0.2 nm. This can be attributed to the lower lattice mismatch (∼4%) within the multilayers and hence a more coherent CoPt (111) structure. Finally, we note that the film roughness could play an important role in influencing the PMA of the multilayers. The highest K eff  ∼ 0.6 MJ/m 3 is achieved for Pt seed layer.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
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  • 10
    Publication Date: 2016-08-25
    Description: Ion implantation with high ion fluences is indispensable for successful use of germanium (Ge) in the next generation of electronic and photonic devices. However, Ge readily becomes porous after a moderate fluence implant ( ∼ 1 × 10 15   ion   cm − 2 ) at room temperature, and for heavy ion species such as tin (Sn), holding the target at liquid nitrogen (LN 2 ) temperature suppresses porosity formation only up to a fluence of 2 × 10 16   ion   cm − 2 . We show, using stylus profilometry and electron microscopy, that a nanometer scale capping layer of silicon dioxide significantly suppresses the development of the porous structure in Ge during a S n − implant at a fluence of 4.5 × 10 16   ion   cm − 2 at LN 2 temperature. The significant loss of the implanted species through sputtering is also suppressed. The effectiveness of the capping layer in preventing porosity, as well as suppressing sputter removal of Ge, permits the attainment of an implanted Sn concentration in Ge of ∼ 15   at . % , which is about 2.5 times the maximum value previously attained. The crystallinity of the Ge-Sn layer following pulsed-laser-melting induced solidification is also greatly improved compared with that of uncapped material, thus opening up potential applications of the Ge-Sn alloy as a direct bandgap material fabricated by an ion beam synthesis technique.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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