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  • 1990-1994  (254)
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  • 1
    Publikationsdatum: 2022-05-04
    Beschreibung: Time-dependent, or 4-D, microgravity changes observed at the Laguna del Maule volcanic field, Chile, since 2013, indicate significant (1.5 × 10^11 kg) ongoing mass injection. Mass injection is focused along the Troncoso fault, and subparallel structures beneath the lake at 1.5–2 km depth, and is best modeled by a vertical rectangular prism source. The low-density change (156 to 307 kg/m3) and limited depth extent suggest a mechanism of hydrothermal fluid intrusion into existing voids, or voids created by the substantial uplift, rather than deeper-sourced dike intrusion of rhyolite or basalt magma. Although the gravity changes are broadly spatially coincident with ongoing surface deformation, existing models that explain the deformation are deeper sourced and cannot explain the gravity changes. To account for this discrepancy and the correspondence in time of the deformation and gravity changes, we explore a coupled magmatectonic interaction mechanism that allows for shallow mass addition, facilitated by deeper magma injection. Computing the strain, and mean, normal, and Coulomb stress changes on northeast trending faults, caused by the opening of a sill at 5 km depth, shows an increase in strain and mean and normal stresses along these faults, coincident with the areas of mass addition. Seismic swarms in mid-2012 to the west and southwest of the mass intrusion area may be responsible for dynamically increasing permeability on the Troncoso fault, promoting influx of hydrothermal fluids, which in turn causes larger gravity changes in the 2013 to 2014 interval, compared to the subsequent intervals.
    Beschreibung: Published
    Beschreibung: 3179–3196
    Beschreibung: 4V. Dinamica dei processi pre-eruttivi
    Beschreibung: JCR Journal
    Repository-Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Materialart: article
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1701-1705 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present the first Raman-scattering studies of the behavior of the intrasubband plasmon mode of a two-dimensional electron gas which is undergoing lateral drift in an applied electric field. The data clearly show the expected Doppler shifts of the modes traveling up- and downstream, together with the expected dependence on the wave vector, but at higher drift velocities, the expected linear shift is distorted because of electron heating effects.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cyclotron resonance in GaAs/AlGaAs heterostructures, containing a high-mobility two-dimensional electron gas (2DEG), has been investigated with the help of a resonator technique over the frequency range 26–34 GHz. Heterostructures with mobilities from 2×105 to 1.6×106 cm2/V s have been measured. The microwave conductivity of the 2DEG is well described by the Drude model and momentum relaxation time values are found to be close to dc values. The cyclotron mass was found to be 0.068±0.002m0.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report far infrared (FIR) studies of plasmons in spatially modulated two-dimensional electron gases (2DEGs) in AlGaAs/GaAs heterostructures using biased overlaid metal gratings, including interdigitated gratings, both as optical couplers and as spatially modulating gates. Comparison of the experimental results with the predictions of scattering matrix calculations of the FIR response of a modulated 2DEG in the presence of a perfectly conducting lamellar grating allow us to deduce the spatial variation of the number density distribution in the 2DEG as a function of grating bias. For the interdigitated grating gates, the 2DEG can be modulated at a period of twice that of the grating fingers by differentially biasing alternate fingers; 2D plasmon resonances have been observed at half-integral values of the grating wave vector G, corresponding to the electrically induced periodicity of the 2DEG modulation itself acting as an optical coupler in addition to the metal grating. The observed G/2 plasmon frequencies decrease with increasing amplitude of the 2DEG number density modulation, in quantitative agreement with those obtained from scattering matrix calculations of the optical response of a modulated 2DEG under a perfectly conducting lamellar grating; calculations of the oscillating charge density profiles show that this occurs because, as the modulation amplitude increases, the oscillation becomes localized in regions of low 2DEG number density which are also under one of the sets of grating fingers, and is therefore better screened.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5606-5621 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An experimental and theoretical study has been made of electron transport over a wide AlGaAs barrier with graded interfaces sandwiched between GaAs contact layers. The width of the central barrier region was varied between 700 and 2100 A(ring). Two series of samples with nominally identical structures but from different sources were investigated. Extensive measurements of both the voltage and temperature dependence of the current were made, as well as measurements of capacitance and magnetoresistance. Drift-diffusion thermionic emission theory has been used to interpret the data. Both numerical and analytical solutions of the model have been developed and were found to be in good agreement with each other. The presence of space charge in the barrier region, which has the effect of increasing the barrier height, was seen to be crucial to an understanding of the data. When the effect of space charge was included in the model good agreement was obtained between theory and experiment for electric fields up to 10 kV cm−1. The numerical solution required only one adjustable parameter, namely the value of the space-charge density. The parameters used in the analytical model were all derived from the experimental data.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The production of electrically active defect centers in molecular beam epitaxy (MBE) GaAs irradiated with low energy (50–500 eV) Sn ions during growth has been investigated as a function of ion energy. GaAs was doped n type during growth with a specially designed Sn focused ion beam column mounted on a MBE growth chamber. The 77 and 300 K Hall mobility and carrier concentration of the GaAs depended strongly on the ion energy, thus providing a sensitive measure of the concentration of ion-induced acceptorlike defect centers. The material was found to be nonconducting for ion energies greater than 200 eV, while a systematic decrease in the acceptor concentration, and consequent increase in the mobility, was observed as the ion energy was decreased below this value. A peak mobility of 90 000 cm2 V−1 s−1 at a carrier concentration of 1×1014 cm−3 was achieved (at 60 K) which is in excess of that obtained in other reports of ion-doped GaAs. A similar dependence on ion energy was found in the 4.2 K photoluminescence spectra of the ion-doped GaAs, characterized by the appearance of a broad acceptor level peak and a decrease in the overall luminescent intensity with increasing ion energy. The lowest energy doped samples provided high quality spectra with narrow linewidths comparable with thermal (Si) doped material. Using the above data, a mechanism is proposed for the production of acceptor centers in this system.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The domain structures of amorphous FeSiB wires have been studied as a function of applied field. The main features of as-cast wires are: the proliferation of surface closure domains; a distinction between core and sheath domain behavior; and a reproducible switching behavior. Transverse magnetically annealed wires have larger domains, show little sign of a sheath and a greater variety of domain displacement mechanisms.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2166-2177 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Laser selective excitation and optical absorption of deuterated SrF2:0.05% Er3+ crystals have revealed eight Er3+ ion centers involving D− ion charge compensation, nine new Er3+–F− centers not associated with D− ions and several approximately cubic symmetry Er3+ centers. In contrast to the trigonal symmetry of the principal F− center, the dominant arrangements in the D− ion charge compensation case are derived from a tetragonal symmetry center. Detailed spectroscopic results for the new centers are presented. Fluorescence polarization ratios are listed for three centers ( J, B, and G1) present in either SrF2:Er3+ or CaF2:Er3+ and crystal-field analyses of these, based on assumed trigonal symmetry, are also reported.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ge-Ag ohmic contacts with good dimensional control to a two dimensional electron gas operating at low temperatures are demonstrated. At 4.2 K, the specific contact resistance lies in the range 2–5 Ω mm for anneals between 520 and 560 °C. The surface morphology is smooth, and the edge definition is of the order of 100 nm. Secondary ion mass spectroscopy analysis indicates that Ge diffusion is limited to within 2000 A(ring) of the surface for a concentration of 1017 cm−3 in samples annealed at 540 °C and below.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have regrown two two-dimensional electron gases (2DEGs) in a wide GaAs quantum well on a large area ex situ patterned n+-GaAs back gate. The transport in these channels is controlled by this gate and a surface front gate. We present results showing the control that the patterned back gate has over the carrier concentration in the low mobility back 2 DEG and the very low leakage currents that are observed from the back gate to the source-drain channel at 1.5 K. Using four terminal resistance and magnetoresistance data the transition from two conducting channels to conduction in the low mobility back 2DEG is shown. The implications of these results for the fabrication of velocity modulated transistors are discussed. © 1994 American Institue of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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