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  • 1
    Digitale Medien
    Digitale Medien
    A combined plasma-surface model for the deposition of C:H films from a methane plasma (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7718-7727 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The deposition of C:H layers by an electron-cyclotron-resonance plasma from methane was investigated. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology, and structure were investigated by high-energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin-film deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH3, the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favorably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356603
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  • 2
    Digitale Medien
    Digitale Medien
    Isotopic exchange in hard amorphous carbonized layers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 163-168 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hard amorphous films of a-C:H and a-C:D were deposited by a rf glow discharge in either CH4 or CD4 . By ion bombardment with protons and deuterons, the H/D exchange process was studied as function of the bombardment fluence by means of depth profile measurements. The local hydrogen and deuterium contents are not adding up to a constant "saturation'' value: the local mixing model is not valid. Instead of that an initial depletion appears, which depends on the incident energy of the ions. At higher fluences, the total (H+D):C ratio tends to increase again, due to an increasing influence of the deposition process. This demonstrates a structural difference between a-C:H films and hydrogen-saturated layers of implanted carbon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345296
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  • 3
    Digitale Medien
    Digitale Medien
    Influence of the ion energy on the growth and structure of thin hydrocarbon films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1354-1361 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Noncrystalline hydrocarbon films were deposited from methane plasmas in an electron-cyclotron-resonance plasma reactor. The films were characterized by infrared spectroscopy and high-energy ion-beam analysis. Film properties were investigated as a function of the energy of ions impinging on the surface of the growing film. The ion energy was varied by applying a dc bias to the sample in the range from 30 to 200 eV. The ion energy was measured with a retarding field analyzer under identical experimental conditions. An abrupt change was found in the sp3/sp2 ratio in the energy interval from 80 to 120 eV. Other film properties such as the refractive index, density, and hydrogen-to-carbon ratio exhibit a more or less monotonic dependence on the ion energy. The results are compared with published data on hydrocarbon films. An analytical model was developed to describe the energy dependence of the hydrogen fraction in the films. It is based on the assumption that displacement of hydrogen atoms is the dominating mechanism that controls the hydrogen fraction in hydrocarbon films. The results are also discussed on the basis of the fully constrained network model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354892
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  • 4
    Digitale Medien
    Digitale Medien
    Low-temperature dynamic depth profile measurements of implanted deuterium in nickel: Precipitation of nickel deuteride (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3169-3177 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Measurements of the retention of deuterium in polycrystalline nickel were obtained at 193 and 223 K through elastic-recoil detection using a 2.6-MeV 4He beam. The depth profiles so obtained show striking differences with their counterparts measured at higher temperatures. Although the profiles are homogeneous at implanted fluences lower than 3×1018 D+ cm−2, they present a large peak centered slightly deeper than the implantation range at higher fluences. Additional features develop as one further implants. The large peak is associated with the buildup of nickel deuteride. A one-dimensional computer model is developed which partly reproduces the features of the measured depth profiles.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346391
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  • 5
    Digitale Medien
    Digitale Medien
    Helium implantation effects in hard hydrogenated carbon layers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2068-2072 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hard amorphous films of a-C:D were deposited by a rf glow discharge in CD4. The implantation of 40-keV 3He+ ions in these films was studied as a function of the helium fluence at temperatures between 100 K and room temperature. The trapped amounts of helium and the deuterium losses in the layer were measured in situ using nuclear reaction analysis with 0.5-MeV D+ and 1-MeV 3He+ beams, respectively, and subsequent ex-situ elastic-recoil detection analysis. A transient helium retention appears in the carbonized layers, occurring only at temperatures below 200 K. Above a critical fluence which depends on temperature and ion flux, outdiffusion of He is observed which is ascribed to the formation of diffusion channels by radiation damage. The deuterium depletion induced by helium bombardment below 200 K sets on in correlation with the helium outdiffusion, but is otherwise independent of the helium trapping.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346559
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  • 6
    Digitale Medien
    Digitale Medien
    In situ characterization of plasma-deposited a-C:H thin films by spectroscopic infrared ellipsometry (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2882-2889 
    Details
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A computer-controlled rotating polarizer ellipsometer, operating in the infrared spectral region between 3.00 and 3.75 μm, has been developed for in situ characterization of amorphous hydrocarbon (a-C:H) thin films, deposited from methane in a rf plasma-enhanced chemical vapor deposition reactor. Spectroscopic IR ellipsometry permits insight into the chemical bonding structure of a-C:H coatings by the nondestructive detection of infrared stimulated C:H stretch vibrations. It is shown that the sp2CHx/sp3 CHx ratio, the content of bonded hydrogen, the infrared linewidth, and the real refractive index of the films depend on the negative self-bias voltage, which is formed at the samples during the deposition process. A transition from a-C:H films with polymerlike properties to hard a-C:H films was attained at a self-bias voltage of approximately −75 V.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1144632
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  • 7
    Digitale Medien
    Digitale Medien
    The nitrogen transport in austenitic stainless steel at moderate temperatures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A model for the transport of nitrogen in austenitic stainless steel at temperatures around 400 °C is presented and discussed. The model considers the diffusion of nitrogen under the influence of trapping and detrapping at trap sites formed by local chromium. Nitrogen depth profiles simulated on the basis of the model with diffusion and detrapping activation energies of 1.1 and 1.45 eV, respectively, are in good agreement with experimental nitrogen profiles. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126294
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  • 8
    Digitale Medien
    Digitale Medien
    Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 55-57 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1430268
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  • 9
    Digitale Medien
    Digitale Medien
    Mechanism of diffusional transport during ion nitriding of aluminum (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400 °C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126070
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  • 10
    Digitale Medien
    Digitale Medien
    On the structure of thin hydrocarbon films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1771-1773 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We compare reported compositions of a-C:H films in a ternary phase diagram. It is assumed that the films comprised three phases: sp3 hybridized carbon, sp2 hybridized carbon and hydrogen. The data are found to split into two well-separated groups. This separation depends on the method used to measure the sp3/sp2 ratio. We conclude from the comparison of NMR and infrared data that infrared analysis does not provide a quantitative measure of the sp3/sp2 ratio.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110683
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