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  • 1
    Publikationsdatum: 2021-05-19
    Beschreibung: Computation of ocean currents in the Drake Passage is carried out with variational assimilation of the data of the hydrographical section across the Drake Passage carried out on December 11–15, 2003, and other data. A stream-eddy structure of the easterly Antarctic Circumpolar Current and a westerly current on the Antarctic Slope are obtained. Water transports by the different current field components and the integral transport across the Drake Passage are estimated. The necessity of direct current measurements in the Drake Passage for a correct estimate of the transport is confirmed.
    Beschreibung: Published
    Repository-Name: AquaDocs
    Materialart: Journal Contribution , Refereed
    Format: pp.772-783
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2052-2055 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Sputtered Mo-Ta alloy and its anodic oxide have been studied in a Mo composition range from 0 to 30 at. %. Resistivity abruptly changed as Mo composition increased above 10 at. % from 185 μΩ cm to about 35 μΩ cm. The crystal structure transformed from tetragonal to cubic at this Mo composition. For higher Ta compositions, the crystal structure varied according to the under-layer polycrystalline film crystal structure, which may be denoted as quasi-epitaxial deposition, and the resistivity decreased to as low as 22 μΩ cm. Anodic oxide films of Mo-Ta alloy were superior to conventional Ta anodic oxide films in regard to resistivity and breakdown field, and the best insulator was obtained at Ta 95 at. %. This quasi-epitaxial Mo-Ta alloy and anodic oxide were applied for thin-film transistor matrix substrates.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5285-5289 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electrical properties of Se- and Zn-doped Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by atmospheric pressure metalorganic chemical vapor deposition under a wide range of growth conditions were investigated using van der Pauw–Hall measurements at room temperature. The dopants were hydrogen selenide and dimethylzinc. The samples were prepared so that parasitic conduction in the GaAs substrate just adjacent to the ternary or quaternary layers could be eliminated from the Hall measurement. The carrier concentration of GaInP and AlGaInP increased as the 0.8±0.1th power of the feed amount of dopants for both conductivity types. At a growth temperature around 680 °C, the hole concentration tended to saturate near the 1018 cm−3 level as the amount of dimethylzinc being fed increased. The carrier concentration decreased with increasing growth temperature, with apparent activation energies of 0.95 eV for Se doping and 1.9 eV for Zn doping. The group-V to group-III feed ratio had a weak influence on the carrier concentration. On the other hand, the Hall mobility of the layers grown under the various growth conditions remained almost constant: the electron mobilities of Se-Ga0.5In0.5P and Se-(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 〈n〈1018 cm−3 were 950–700 and ∼100 cm2/V s, respectively. The hole mobilities of Zn-Ga0.5In0.5P and Zn-(Al0.5Ga0.5)0.5In0.5P within the carrier concentration range of 1017 〈p〈1018 cm−3 were ∼34 and ∼16 cm2/V s, respectively.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2448-2452 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are dark defects that run parallel to the channeled stripe. Using transmission electron microscopy, we found that these dark defects are composed of precipitates, dislocation loops, and dislocation dipoles. In order to know the relation between these degradation phenomena and the thermal strain induced by lattice mismatch, we calculated the stress distribution in the semiconductor laser using the finite element method. According to this simulation, a stress concentration in the active layer arises near the edges of the channeled stripe where the volume dilatation is maximal. Combining the results of experiments and simulation, we concluded that interstitial atoms created by nonradiative recombination migrate to the edges of the stripe, and that ultimately dark defects appear near the edges of the stripe.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2164-2166 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaInP epitaxial crystals grown on (001) GaAs at 660–700 °C by metalorganic chemical vapor deposition are examined by transmission electron microscopy. The computer-processed image of the high-resolution electron micrograph clearly reveals a lamellate-ordered domain structure of two variants of {111} superlattices, which is also investigated using cross-section and plan-view dark field electron micrographs. The spikes of well-defined superspots in the diffraction pattern were found to originate from the shape of the domains. The investigation of GaInP grown with different Zn concentrations showed that the disordering occurs as a result of a decrease in the density rather than the size of the domain.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 379-381 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have studied interfacial atomic steps in GaAs/AlAs superlattices using high-resolution transmission electron microscopy (HRTEM) and lattice image simulation. We find arrays of bright spots at the interface in the TEM image to be good indicators of the interface configuration. Doubling of the bright spot arrays and step-shaped arrays in TEM lattice images indicate a "type 1'' monolayer step whose front is perpendicular to the direction of the electron beam and a "type 2'' monolayer step whose front is parallel to the direction of the electron beam. Our HRTEM observations indicate that the atomic steps at GaAs and AlAs interfaces grown at 700 °C are denser than at interfaces grown at 500 °C.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1572-1573 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A gain-guiding tapered stripe laser was fabricated using a Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P double heterostructure wafer grown by metalorganic chemical vapor deposition. The laser showed a continuous wave (cw) threshold current of 48 mA, a maximum temperature for cw operation of 81 °C, an aspect ratio of about 2, and an astigmatism near 25 μm. The emission wavelength was 684 nm. Thirty-two devices have been operating without significant degradation for more than 2000 h at 50 °C with a constant output power of 3 mW.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    ISSN: 1749-6632
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Allgemeine Naturwissenschaft
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Digitale Medien
    Digitale Medien
    Springer
    Cellular and molecular life sciences 24 (1968), S. 1077-1078 
    ISSN: 1420-9071
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Notizen: Zusammenfassung Eine neue Messmethode für Durchblutungsmessungen besteht darin, dass selbstgeregelter Strom mit Hilfe des Rückkopplungsregelungssystems für die Heizung gebraucht wird. Mit dieser Methode wird der Temperaturunterschied zwischen den geheizten und den gekühlten Kontaktplatten ganz gering und konstant gehalten, so dass der Effekt der lokalen Wärmeakkumulation, der bei Heizung mit konstantem Strom entsteht, am geprüften Gewebe wegfällt. Diese Methode hat eine höhere Linearität und bessere Anwendungsfähigkeit über weitere Durchblutungsgebiete, und sie spricht auch schneller an als die frühere Methode der Heizung mit konstantem Strom.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Digitale Medien
    Digitale Medien
    Springer
    Cellular and molecular life sciences 23 (1967), S. 842-843 
    ISSN: 1420-9071
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Medizin
    Notizen: Zusammenfassung Befunde bei Hunden mittels histochemischer Fluoreszenz erbringen den Nachweis des Eindringens von Catecholaminfluoreszenz-Nervenfasern in die glatten Muskelschichten der Media in der Arteria dorsalis pedis. Die Ergebnisse sind histochemisch, pharmakologisch und chirurgisch unterbaut worden.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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