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  • 1975-1979  (2)
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  • 1
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The superconducting transition temperature and the low temperature resistivity of highpurity NbH x samples were measured up tox=1.08. In the hydride phases (x〉0.7) no transition was found above 1.3 K, whereas samples in the two-phase region 0〈x〈0.7 are superconducting withT c=9.4 K. The residual resistivity in the normal state exhibits a maximum of 1.2 µΩ cm atx~0.69. Magnetization curves belowT c exhibit large hysteresis effects. The morphology of the two-phase structure was analyzed by optical microscopy.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The scattering of conduction electrons by defects is described by a low-field transport relaxation timeτ k x . It depends on the electron wavevectork and on the direction of the electric fieldE/E, but not on the magnetic fieldH. From a discussion of Kohler's rule written in terms of the exact relaxation timeτ k * it follows that this approximation is very good for low values ofH/ρ, withρ being the resistivity forH=0. Assumingτ k x to be known, the linearized Boltzmann equation is solved by a Jones-Zener expansion up to termsH 3. For metals with cubic symmetry we derive simple formulae for the coefficients of transverse and longitudinal magnetoresistance and for the two leading terms of the Hall coefficientR(H)=R 0+R 2(H/ρ)2. Simplifications occur for aτ k with cubic symmetry and for metals with special Fermi surfaces. These formulae are used to interpret experimental results of the magnetic field dependence ofR(H) in Al(Ge) at 4 K. In this dilute aluminium alloyR 0 is highly positive andR 2 strongly negative. By irradiating a 3,000 ppm Al(Ge) sample with reactor neutrons at 4 K, an increasing concentration of self-interstitials and vacancies is added to the germanium impurities resulting in a decrease of bothR 0 and |R 2|. This is discussed in a three-group model of the Fermi surface of aluminium.
    Type of Medium: Electronic Resource
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