Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract The effect of the frequency of the applied voltage on the breakdown of semiconductors is investigated. Unlike earlier observations, our experiment yields, in some cases, a breakdown voltage versus frequency curve which is similar in nature to the high-frequency breakdown characteristics in gas devices wherein the breakdown voltage shows a minimum at a certain frequency. A possible theoretical explanation for the above behaviour of semiconductor devices based on dielectric heating is given, which is in fair agreement with the observations.
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