Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
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