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  • 1
    ISSN: 1432-1041
    Keywords: theophylline ; asthma ; personality measures ; pharmacokinetics ; volunteers ; patients
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Thirteen volunteers received an iv dose of theophylline followed by blood sampling for 8 h to calculate pharmacokinetic parameters. Ten patients with asthma undergoing chronic dosing with slow release aminophylline underwent 12 h of blood sampling to calculate theophylline clearance. Both groups completed an Eysenck Personality Inventory (EPI) from which was derived scores for neuroticism (N) and extroversion (E). Using multiple regression analysis no independent effect of either N or E score on theophylline clearance or half-life could be demonstrated.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-1041
    Keywords: theophylline clearance ; age ; adult age range ; normal subjects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary Twenty volunteers aged between 20 and 57 years were given 197 mg of theophylline (as lysine theophylline) by iv infusion over 5 minutes to test the hypothesis that within the adult age range theophylline clearance declines with age. Samples were assayed for theophylline using the EMIT assay and clearance was determined by standard methods. Clearance values were 0.73 ml/min/kg below age 38 years and 0.75 ml/min/kg at and above age 38 years. Multiple regression analysis using age as a continuous variable showed no relationship between age and clearance.
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  • 3
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 339 (1989), S. 155-156 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] P190 is a heterodimer of two disulphide-linked subunits: a 50K a-chain which is exposed at the cell surface and a 145K /3-chain that spans the plasma membrane and includes sites for tyrosine phosphorylation5'6. Recently, it has been proposed that the protein encoded by the c-met proto-oncogene may ...
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  • 4
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 337 (1989), S. 311-312 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SIR—Because the cell line TE671 is said to originate from an early culture of a human medulloblastoma1, it has been widely used to investigate this tumour type and as a model for primitive neural cells in general. And because the cell line can be infected by the AIDS virus HIV2 (in a way ...
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Type of Medium: Electronic Resource
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  • 6
    Publication Date: 2013-08-31
    Description: A program was performed to address the mechanical and environmental needs of Stirling engine heater head and regenerator housing components, while reducing the dependence on strategic materials. An alloy was developed which contained no strategic elemental additions per se. The base is iron with additions of manganese, molybdenum, carbon, silicon, niobium, and ferro-chromium. Such an alloy should be producible on a large scale at very low cost. The resulting alloy, designated as NASAUT 4G-Al, contained 15 Mn, 15 Cr, 2 Mo, 1.5 C, 1.0 Si, 1.0 Nb (in weight percent) with a balance of Fe. This alloy was optimized for chemistry, based upon tensile strength, creep-rupture strength, fracture behavior, and fatigue resistance up to 800 C. Alloys were also tested for environmental compatibility. The microstructure and mechanic properties (including hardness) were assessed in the as-cast condition and following several heat treatments, including one designed to simulate a required braze cycle. The alloy was fabricated and characterized in the form of both equiaxed and columnar-grained castings. The columnar grains were produced by directional solidification, and the properties were characterized in both the longitudinal and transverse orientations. The NASAUT 4G-Al alloy was found to be good in cyclic-oxidation resistance and excellent in both hydrogen and hot-corrosion resistance, especially in comparison to the baseline XF-818 alloy. The mechanical properties of yield strength, stress-rupture life, high-cycle-fatigue resistance, and low-cycle-fatigue resistance were good to excellent in comparison to the current alloy for this application, HS-31 (X-40), with precise results depending in a complex manner on grain orientation and temperature. If required, the ductility could be improved by lowering the carbon content.
    Keywords: METALLIC MATERIALS
    Type: NASA-CR-185174 , DOE/NASA/0282-1 , R89-917447-32 , NAS 1.26:185174
    Format: application/pdf
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  • 7
    ISSN: 1572-9931
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract The human INT1L1 gene, which exhibits homology to the protooncogene INT1 is very closely linked to the MET gene and cystic fibrosis locus on human chromosome 7. In the present study we have isolated overlapping genomic clones that correspond to the mouse homolog of the INT1L1 gene and have used the cloned DNA as probes to examine the distribution of the mouse INT1L1 gene within a series of 35 mouse-hamster somatic cell hybrids. These analyses have localized the INT1L1 gene to mouse chromosome 6. In addition, we demonstrate that the mouse INT1L1 and MET genes are coamplified in lines of spontaneously transformed mouse NIH3T3 cells, indicating that these genes may remain closely linked within the mouse genome.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of slip dislocations in BF2 ion-implanted, 100-mm-diam silicon wafers during rapid thermal annealing is investigated. Whole wafer x-ray topography shows that annealing at 1150 °C causes slip to initiate randomly at positions of maximum resolved stress at the wafer edges and over scribe marks made on the back surface prior to annealing. Lowering the annealing temperature by 20 °C, which corresponds to decreasing the silicon yield stress by less than 106 dyn cm−2, prevents slip from occurring and allows sufficient removal of implantation-induced defects from which junction diodes with good current-voltage characteristics are fabricated.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1083-1085 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
    Type of Medium: Electronic Resource
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