PACS: 6239; 6144; 6158
Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
2 Ge2 layers on W(110). In order to produce well-ordered and atomically clean surfaces of the Ce-based intermetallic system the growth was performed under UHV conditions (p〈2×10-11 mbar). Both the polycrystalline CeNi2Ge2 compound and the individual elements Ce, Ni, and Ge were used as evaporants. The characterisation of the layers was made with LEED, SEM, and XPS. We find a significant influence of the substrate temperature and the evaporation power on the growth characteristics. The compound material CeNi2Ge2 exhibits complicated behaviour when evaporated. Under carefully selected growth conditions we obtain well-ordered films with a stoichiometry of Ce:Ni:Ge=1:2:2 and a (001) oriented surface of the body-centered tetragonal ThCr2Si2-type structure. The k∥ dispersion and binding energies of the valence bands of these layers were determined with ARUPS.
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