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  • 2000-2004  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6636-6644 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching fields of magnetic wires with trilayer structure consisting of NiFe/Cu/Co were investigated using giant magnetic resistance effect. The switching fields of both magnetic layers were observed to be inversely proportional to wire width (150–520 nm). We found that the magnetization of the NiFe layer switches under much lower applied field than in the case of single layer structure by the assistance of the stray field from the magnetic charge of Co at the edge of the wire. Attaching a pad at one end of the wire causes drastic decrease of the switching field. We investigated pad shape dependence of the switching field of the Co layer. For the sample with a square pad we measured the temperature dependence of the switching field between 5 and 300 K. The dependence at low temperatures between 5 and 50 K can be described by the model on thermally assisted magnetization reversal over a simple potential barrier. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Cr/Sn and Fe/Cr/Sn/Cr multilayers, where monatomic Sn layers are embedded in Cr layers and Fe/Cr multilayers respectively, were prepared by means of ultrahigh-vacuum deposition technique, and the magnetic hyperfine field induced at the 119Sn nuclear sites was examined using conversion electron Mössbauer spectroscopy. The magnetic structures of the Cr layers are inferred from the size and direction of the magnetic hyperfine field transferred at the Sn sites.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5648-5650 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The contribution of a magnetic domain wall to electric resistivity was measured using NiFe wires (width: 1 μm) partially covered with hard magnetic pads (CoSm). When the wire is covered with N pinning pads, 2N domain walls can be produced in the wire by reversing the magnetization only at the uncovered parts. The resistance for the magnetically saturated state (no domain wall structure) and that for the magnetic structure with 2N domain walls were compared at zero applied field. It was found that the resistance is smaller when magnetic domain walls exist, and that the domain wall resistance is almost temperature independent. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3468-3470 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nanocontact structure (typically 22×34 nm2) between two NiFe wires was fabricated by an electron-beam lithography and a lift-off method, and the magnetoresistance was measured. The magnetization switching process was artificially controlled by engineering the sample geometry to realize a magnetic structure with a single domain wall (DW) trapped in the nanocontact area. This domain structure was confirmed by magnetic force microscopy observations. The magnetization rotation of 180° was realized within the nanocontact area. The contribution of the DW to the resistance was negative, which can be understood on the basis of anisotropic magnetoresistance. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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