ALBERT

Description: High performance improvement (+88% in peak G m and 〉30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the OI Si channel (+75% at N inv  = 4.0 × 10 12  cm −2 and +25% at N inv  = 8.0 × 10 12  cm −2 ). Raman and high-resolution Rutherford backscattering measurements confirmed that negligible strain is induced in the OI Si layer, and hence, it cannot be used to explain the origin of mobility improvement. Poisson-Schrödinger based quantum mechanical simulation was performed, taking into account phonon, surface roughness and Coulomb scatterings. The OI layer was modeled as a “quasi barrier” region with reference to the Si conduction band edge to confine inversion electrons. Simulation explains the measured electron mobility enhancement as the confinement effect of inversion electrons while the formation of an super-steep retrograde well doping profile in the channel (as a result of dopant diffusion blocking effect accompanied by introduction of the OI layer) also contributes 50%–60% of the mobility improvement.

Description: Near-surface thrust fault splays and antithetic backthrusts at the tips of major thrust fault systems can distribute slip across multiple shallow fault strands, complicating earthquake hazard analyses based on studies of surface faulting. The shallow expression of the fault strands forming the Seattle fault zone of Washington State shows the structural relationships and interactions between such fault strands. Paleoseismic studies document an ~7000 yr history of earthquakes on multiple faults within the Seattle fault zone, with some backthrusts inferred to rupture in small (M ~5.5–6.0) earthquakes at times other than during earthquakes on the main thrust faults. We interpret seismic-reflection profiles to show three main thrust faults, one of which is a blind thrust fault directly beneath downtown Seattle, and four small backthrusts within the Seattle fault zone. We then model fault slip, constrained by shallow deformation, to show that the Seattle fault forms a fault propagation fold rather than the alternatively proposed roof thrust system. Fault slip modeling shows that back-thrust ruptures driven by moderate (M ~6.5–6.7) earthquakes on the main thrust faults are consistent with the paleoseismic data. The results indicate that paleoseismic data from the back-thrust ruptures reveal the times of moderate earthquakes on the main fault system, rather than indicating smaller (M ~5.5–6.0) earthquakes involving only the backthrusts. Estimates of cumulative shortening during known Seattle fault zone earthquakes support the inference that the Seattle fault has been the major seismic hazard in the northern Cascadia forearc in the late Holocene.

Description: Plate tectonic reconstructions are usually constrained by the correlation of lineaments of surface geology and crustal structures. This procedure is, however, largely dependent on and complicated by assumptions on crustal structure and thinning and the identification of the continent-ocean transition. We identify two geophysically and geometrically similar upper mantle structures in the North Atlantic and suggest that these represent remnants of the same Caledonian collision event. The identification of this structural lineament provides a sub-crustal piercing point and hence a novel opportunity to tie plate tectonic reconstructions. Further, this structure coincides with the location of some major tectonic events of the North Atlantic post-orogenic evolution such as the occurrence of the Iceland Melt Anomaly and the separation of the Jan Mayen microcontinent. We suggest that this inherited orogenic structure played a major role in the control of North Atlantic tectonic processes.

Description: Murray's law states that the volumetric flow rate is proportional to the cube of the radius in a cylindrical channel optimized to require the minimum work to drive and maintain the fluid. However, application of this principle to the biomimetic design of micro/nano fabricated networks requires optimization of channels with arbitrary cross-sectional shape (not just circular) and smaller than is valid for Murray's original assumptions. We present a generalized law for symmetric branching that (a) is valid for any cross-sectional shape, providing that the shape is constant through the network; (b) is valid for slip flow and plug flow occurring at very small scales; and (c) is valid for networks with a constant depth, which is often a requirement for lab-on-a-chip fabrication procedures. By considering limits of the generalized law, we show that the optimum daughter-parent area ratio Γ, for symmetric branching into N daughter channels of any constant cross-sectional shape, is Γ = N − 2 / 3 for large-scale channels, and Γ = N − 4 / 5 for channels with a characteristic length scale much smaller than the slip length. Our analytical results are verified by comparison with a numerical optimization of a two-level network model based on flow rate data obtained from a variety of sources, including Navier-Stokes slip calculations, kinetic theory data, and stochastic particle simulations.