ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This work presents the optical and structural characterization of p-type GaAs epilayers.The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence ofthe doping in the optical and structural properties of the GaAs layers has been studied byphotoluminescence (PL) and Raman dispersion measurements. The range of analyzed holeconcentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. Forcarrying out doping p-type, it was necessary to modify the hydrogen activity in the growthatmosphere with the control of a H2+N2 mixture, which was used like transporting gas. Thephotoluminescence response and Raman dispersion of the layers are strongly dependence of thegrowth temperature, which were investigated based on the hole concentration. The PL response ofthe layers shows two radiative transitions, band-to-band and band-to-C-acceptor at low holeconcentration and disappears at high concentrations. Raman scattering spectra show LO mode at270 cm-1 for low doped samples and a LO-like mode at 290 cm-1 produced by the phonon-holeplasmoncoupling for high doped samples
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.587-588.283.pdf
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