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Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation (2002)

Fitz, C. ; Kolitsch, A. ; Möller, W.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 55-57

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1430268

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