ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Comparative analysis of the conditions for the formation of shallow acceptor centers upon high-temperature annealing in silicon irradiated with electrons, neutrons, and energetic ions is performed. The introduction of a sufficiently large (in comparison with the initial concentration of impurities and defects) concentration of radiation-induced distortions of the silicon lattice is shown to lead to the formation of thermal acceptors stable up to annealing temperature of ∼650°C. The acceptor formation is supposed to be due to the interaction of background acceptor impurities (supposedly boron) with vacancies “stored” in multivacancy clusters and released upon their breakup.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187925
Permalink