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  • American Institute of Physics (AIP)  (8)
  • Geological Society of America (GSA)
  • Amsterdam : Elsevier
  • 2000-2004  (5)
  • 1995-1999  (3)
  • 2002  (4)
  • 2000  (1)
  • 1998  (3)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 1361-1369 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic energy transfer pathways that occur following collisions between I2 in the E ion-pair electronic state (v=0, J=55) and He and Ar atoms have been determined. The nearby D, D′, and β ion-pair states are populated, but with relative branching ratios that vary with the rare gas collision partner. In He/I2 collisions, the D state is preferentially populated, while Ar/I2 collisions preferentially populate the β electronic state. Bimolecular rate constants and effective hard sphere collision cross sections have been determined for each channel; the cross sections range from 7.0±1.0 Å2 for populating the β state with Ar collisions to 0.9±0.2 Å2 for populating the D′ state with He collisions. For both rare gas collision partners, and all three final electronic states, low vibrational levels are populated, in rough accord with the relevant Franck–Condon factors. There is little propensity observed for population of vibrational levels that are in near resonance with the initially prepared level in the E state. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 2265-2273 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Quantum mechanical calculations on the vibrational predissociation dynamics of NeBr2 in the B electronic state have been performed and the results compared with both experimental data and other computational studies. For vibrational levels with v≤20 we find that the vibrational state dependence of the predissociation lifetimes is in qualitative agreement with experimental measurements, as are the calculated Br2 fragment rotational distributions. For higher vibrational levels, the B←X excitation profiles are well represented by a sum of two Lorentzian line shapes. We attribute this result to the presence of long-lived resonances in the dissociative continuum that are reminiscent of long-lived dissociative trajectories in previous classical studies of NeBr2. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 8195-8198 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The filling processes of water and cyclohexane in porous silica (with a characteristic pore size of 60 Å) are investigated using the nuclear magnetic resonance (NMR) technique of cryoporometry. In this technique, the liquid was frozen in the pores before the temperature was raised gradually; melting the smallest particles first and then particles of increased size. The volume of the molten liquid present was measured using the height of a T2 spin echo. The experiments were performed with filling fractions ranging from 10% to 100%. The results showed distinctly different behaviors of the fluids, which depended on the surface adhesion. It was found that water (a fluid which wets the pore surface) forms small puddles—much smaller than the smallest pore size—at low filling fractions. These puddles grow in size as more water is added until all the pore volume is filled. Cyclohexane (a non-wetting fluid) on the other hand, does not form small puddles but completely fills the pores with a preference for the smaller pores. Water is found to give more accurate results for the pore size distribution than cyclohexane, in 60 Å silica. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2597-2599 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the quantification properties of scanning capacitance microscopy (SCM) by using two dedicated test structures and highlight the response of SCM to changes in dopant density. Our results indicate that contrast reversal occurs and that the SCM output is not always a monotonically increasing signal with decreasing dopant density. Two epitaxially grown staircase structures covering the doping ranges 1014–1020 cm−3 p type and 5×1014–5×1019 cm−3 n type were produced for this study as the turning point in the response function typically occurs at a doping level of around 1017 cm−3. Through the use of a simple simulation model we see that contrast reversal is expected due to a relative shift between the dC/dV curves for different doping levels. The onset of contrast reversal can be adjusted by changing the dc sample bias leading to a shift in the operating position of the SCM, and the significance of this point will be discussed here. © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1367-1367 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This talk will describe proposed studies of atomic- and nanoscale dynamics in condensed matter which take advantage of the high coherent x-ray flux to be produced by future x-ray free-electron laser (FEL) sources, such as the Linac Coherent Light Source at Stanford. In particular, I will focus on the current status and future prospects for photon correlation spectroscopy using coherent x-rays (XPCS), and the use of the ultrashort pulse structure of the x-ray FEL to observe dynamics into the femtosecond range. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for selective characterization of the structure of free and buried thin-film interfaces by vibrationally resonant sum frequency generation spectroscopy is described. Manipulation of Fresnel coefficients by choice of film thickness on a reflecting substrate allows simultaneous optimization of the signal from the desired interface and minimization of the signal from other interfacial sources. This technique is demonstrated for the free polystyrene (PS)/air and the buried PS/spin-on glass interfaces. Our spectra show that the pendant phenyl group orientation is similar at the buried and free interfaces, with the phenyls pointing away from the bulk PS at each interface.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1809-1811 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in situ surface x-ray scattering measurements of PbTiO3 epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth conditions. At lower PbO overpressures, we observe a transition to step-flow growth and an increased rate of recovery after growth, indicating a higher surface mobility. © 2002 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2972-2974 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent electron diffraction and microscopy studies of GaN nucleation layers have shown that faults in the stacking of the close-packed planes result in the coexistence of cubic and hexagonal phases within the layers. Using grazing incidence x-ray scattering, we have quantified the proportion of the cubic and hexagonal phases throughout the nucleation layer. We compare the structure of a 20 nm nucleation layer grown on sapphire by atmospheric pressure metal-organic chemical vapor deposition at 525 °C to that of an identical layer heated to 1060 °C. The fractions of cubic and hexagonal phases in the layers are determined by a comparison of the scattering data with a Hendricks–Teller model. High temperature exposure results in a decrease of the cubic fraction from 0.56 to 0.17. The good agreement with the Hendricks–Teller model indicates that the positions of the stacking faults are uncorrelated. © 1998 American Institute of Physics.
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