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  • American Institute of Physics (AIP)  (4)
  • Genetics Society of America (GSA)  (1)
  • 2010-2014  (1)
  • 1995-1999  (4)
  • 2013  (1)
  • 1998  (4)
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  • 2010-2014  (1)
  • 1995-1999  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3151-3153 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a self-regulated method for the growth of tilted superlattices. It relies on the reconstructed surfaces alternatively stabilized during the atomic layer epitaxy (ALE) of compound semiconductors. The c(2×2)+(2×1) Cd-stabilized and the (2×1) Te-stabilized surfaces alternatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-regulation of the growth at 0.5 monolayer deposited per ALE cycle for both CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of precise flux control inherent to tilted superlattices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 6684-6690 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Two Q branches of N2O near 579.3 and 2798 cm−1 belonging to the 2ν20e−ν21f and ν2+ν3 bands, respectively, of Σ←Π and Π←Σ symmetry, have been studied for He and N2 perturbers at pressures ranging from 0.1 to 2 atm, using a tunable diode laser and a difference-frequency laser spectrometer. To interpret the line-mixing effects in these spectra, we have applied a model based on the energy corrected sudden approximation whose parameters have been only derived from line-broadening data for N2O–He and also from the measured absorption by the Q branches for N2O–N2. This model provides a satisfactory agreement with experimental band shapes, whatever the band, the perturber and the pressure considered. Significantly larger line-mixing effects are shown for N2O–He with respect to N2O–N2. Finally, the assumption made in the calculations to treat separately the couplings in the even and odd j levels appears to have a negligible influence on the resulting band shapes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4300-4308 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 °C CdTe/MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 °C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c12/c11 is otherwise inferred through this study for zincblende MnTe (1.12). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 756-764 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured by high resolution transmission electron microscopy (HRTEM) the width of interfaces in two II–VI heterostructures: CdTe/MnTe and CdTe/MgTe, as a function of the growth mode. A critical review of the different parameters involved in the direct determination of the chemical profile by HRTEM enables us to precisely determine the sensitivity and accuracy of the methods on these particular materials. The measured interface width is of the order of 2.5–3 monolayers (ML) and is compatible with an exchange mechanism involving the monolayer being grown and the last deposited monolayer. Several growth procedures were compared: conventional molecular beam epitaxy and atomic layer epitaxy (ALE). In the case of saturated and oversaturated ALE the inverse MnTe/CdTe interface is no longer planar. A destabilization of the growth front occurs when one or more Mn monolayers per cycle are deposited, through the formation of MnTe islands. Thermal interdiffusion seems to be negligible in the case of Mn. The present HRTEM values for the interface widths extend the results obtained by magneto-optical measurements to higher concentration values and confirm the exchange mechanism. The higher value obtained by x-ray reflectivity (4.7 ML) is explained by the large difference of the average volume on which the measurement is performed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Publication Date: 2013-08-08
    Description: Fkbp5 is genetically linked to stress-related diseases. Fkbp5 knockout mice are available and widely used to explore the role of Fkbp5 in health and disease. We found that these mice carry a gene duplication of glyoxylase-1, which explains why glyoxylase-1 levels are increased in the Fkbp5 knockout mice.
    Electronic ISSN: 2160-1836
    Topics: Biology
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