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  • American Institute of Physics (AIP)  (3)
  • 1995-1999  (3)
  • 1960-1964
  • 1997  (1)
  • 1996  (2)
  • 1995
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  • 1995-1999  (3)
  • 1960-1964
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  • 1997  (1)
  • 1996  (2)
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  • 1998  (3)
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4019-4026 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present experimental results concerning optical transitions and carrier dynamics (capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements at high excitation level reveal optical transitions above the ground state emission. These transitions are found to originate from occupied hole states by solving the quantum dot eigenvalue problem. Time-resolved studies after non-resonant pulse excitation exhibit a relaxation ladder of the excited carriers from the GaAs barrier down to the ground state of the quantum dots. From both the continuous-wave measurements and the PL-decay curves we conclude that the carrier relaxation at non-resonant excitation is mediated by Coulomb interaction (Auger effect). PL-decay curves after resonant pulse excitation reveal a longer rise time compared to non-resonant excitation which is a clear indication of a relaxation bottleneck inside the quantum dots. We interpret the rise time (≈ 400 ps) in this case to originate from relaxation via scattering by acoustic phonons. The PL-decay time of the ground state emission ≈700 ps is interpreted as the excitonic lifetime of the quantum dot. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2127-2129 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Spontaneously ordered Ga0.47In0.53As grown on substrates with the (001) surface tilted 4° towards {111}B are studied using spectroscopic methods as well as x-ray diffraction, transmission electron diffraction and dark-field transmission electron microscopy. The single variant ordering is proved by the absence of one class of the ordering induced 〈fraction SHAPE="CASE"〉12{111}B superlattice spots in transmission electron diffraction patterns as well as by the tilted polarization of the photoluminescence emerging from the samples cleaved edge. The temperature dependence of the luminescence peak position shows an anomalous behavior at low temperatures and a strong dependence of the peak position on the excitation power. From low temperature absorption measurements, we find a band gap reduction of 37 meV and a valence band splitting of 13.2 meV. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2698-2700 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We compare the field screening behavior of quantum-confined Stark effect modulator structures where the GaInAsP/InP heterojunction is in the intrinsic (standard structure) or in the doped regions (modified structure) at working wavelengths of 1.55 and 1.3 μm. The modified structures are obtained by expanding the GaInAsP confinement layers into the p-doped and n-doped regions without changing the total intrinsic layer thickness. The effectiveness of the InP heterobarriers for the holes on the p-side and for the electrons on the n-side is thereby lowered. A significant reduction of field screening for the modified structures is achieved. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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