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  • Springer  (38)
  • American Institute of Physics (AIP)  (9)
  • Geological Society of America (GSA)
  • Amsterdam : Elsevier
  • 2000-2004
  • 1995-1999  (47)
  • 1970-1974
  • 1997  (15)
  • 1995  (32)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5143-5154 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope in ultrahigh vacuum has been used to investigate the growth, morphology, and surface atomic structure of ultrathin titanium silicide films on Si(111) substrates. Microstructural considerations have been used to identify various stages of the silicide growth. Atomic resolution images of a titanium silicide crystallite facet, formed at 850 °C, have been identified as a 2×2 silicon termination of a C54-TiSi2(010) surface. Possible epitaxial silicide/silicon relationships are provided. Theoretical consideration has been given to the interatomic bonding in the C54-TiSi2 lattice and the dangling bond density of ideally terminated silicide planes has been calculated. The highly reconstructed atomically flat surface of a large crystallite, formed at 1200 °C, has been assigned as a C54-TiSi2(311) plane giving the epitaxial relation C54-TiSi2(311)(parallel)Si(111). The presence of pairs and linear chains of defects, with common orientations, is attributed to the decomposition of a diatomic gas on the facet, producing sites of preferential adsorption on the silicide surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 563-571 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) in ultrahigh vacuum has been used to investigate the growth, morphology, and surface atomic structure of ultrathin titanium silicide films on Si(100) substrates. Microstructural considerations have been used to identify various stages of the silicide growth. Methods for STM crystallography have been developed and used to identify possible epitaxial silicide/silicon relationships based on morphological considerations. Atomic resolution images of a titanium silicide crystallite have identified a 2×2 silicon termination of a C54-TiSi2(111) surface. It is shown that unambiguous identification of epitaxial relationships requires images of the atomic structure of the silicide crystallite surfaces in addition to morphological information. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 7802-7809 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The filling processes of water and cyclohexane in porous silica (40 Å, 60 Å and 112 Å pore size samples) were studied using T2 nuclear magnetic resonance (n.m.r.) experiments. The silica pores contained water or cyclohexane and the experiments were performed at room temperature and at filling fractions ranging from 0.02 to 1.0 (that is, completely full). Two distinct processes were observed which depended on the hydrophilicity of the silica surface (or the surface adhesion of the liquid). Water was found to collect in small puddles in the silica interstices, and to form a surface layer over the silica before the remaining pore volume was filled. Water in a surface-treated porous silica and cyclohexane in regular porous silica appeared to completely fill the smaller before the larger pores, and not form a separate surface-coating layer. This work also presents the techniques used to calculate quantitative information about the filling process; specifically, determination of the volume to surface-area ratio of the liquid puddles as well as the number of these puddles, is demonstrated. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6946-6948 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Subpicosecond lasers measured the appearance rate of OH X(v=0) following 267 nm photolysis of the CH4⋅O3 van der Waals complex. The rise of the OH A←OH X laser-induced fluorescence with respect to the photolysis/probe delay time, tD, was LIF(tD)=1−exp(−tD/τ) with τ approximately 3 ps, indicating that the reaction CH4+O(1D2)→CH3+OH involves a CH3OH* intermediate with that lifetime. No prompt OH(v=0) from a direct or fast reaction was observed. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3083-3083 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Asymmetrically cut perfect crystals, in both the Laue and Bragg geometries, are examined as single crystal monochromators for x-ray beams that are collimated to a small fraction of the Darwin width, as is typical in experiments with coherent x rays. Both the Laue and asymmetric Bragg geometries are plagued by an inherent chromatic aberration that increases the beam divergence much beyond that of the symmetric Bragg geometry. Measurements from a recent experiment at the ESRF are presented to compare Si(220) (symmetric Bragg), diamond(111) (asymmetric Laue), and diamond(111) (symmetric Bragg inclined) geometries. © 1995 American Institute of Physics.
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformation of titanium silicide from the C49 to the C54 structure was studied using x-ray diffraction of samples containing arrays of narrow lines of preformed C49 TiSi2. Using a synchrotron x-ray source, diffraction patterns were collected at 1.5–2 °C intervals during sample heating at rates of 3 or 20 °C/s to temperatures of 1000–1100 °C. The results show a monotonic increase in the C54 transition temperature by as much as 180 °C with a decreasing linewidth from 1.0 to 0.1 μm. Also observed is a monotonic increase in (040) preferred orientation of the C54 phase with decreasing linewidth. The results demonstrate the power of in situ x-ray diffraction of narrow line arrays as a tool to study finite size effects in thin-film reactions. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 3272-3272 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 5454-5467 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Br2 fragment rotational distributions that result from the vibrational predissociation of NeBr2 in the B electronic state have been measured for several initial vibrational levels. In each case, the rotational distributions extend to the effective energetic limit determined by the amount of energy available (Eavl) for disposal into the fragment rotational and translational degrees of freedom. Analysis of the data allows refinement of the NeBr2 dissociation energy; we find that D0=70.0±1.1 cm−1 for the X electronic state, v=0. Both Δv=−1 and −2 dissociation events have been examined. For dissociation pathways with approximately the same value of Eavl the Δv=−2 pathways are observed to have a higher fraction of the fragment energy in rotational excitation. The overall shape of the Δv=−1 distributions are insensitive to the value of Eavl, suggesting that a Franck–Condon model for the dissociation may have some validity, though quantitative quantum mechanical calculations demonstrate that this model does not reproduce the large degree of fragment rotational excitation. Two classical models for the dissociation also fail to reproduce the extent of fragment rotational distribution. This result is discussed in light of previous experimental and theoretical investigations, focusing on the apparent agreement of classical models with the IBr fragment rotational distributions that result from the dissociation of NeIBr. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Sexual plant reproduction 10 (1997), S. 236-240 
    ISSN: 1432-2145
    Keywords: Key words Cucurbita texana ; Pollen ; Pollen performance ; Pollen competition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  We examined the effects of pollen competition (pollen load size) on sporophytic vigor and gametophytic performance in Cucurbita texana, a wild gourd, while controlling for alternative interpretations of the data. Under field conditions we compared the vigor of progeny produced from large and small pollen loads and examined the in vitro performance of the pollen produced by the progeny. We found that the progeny from large pollen loads germinated faster and had a greater reproductive output (male flowers and fruits) than progeny produced from small pollen loads. In addition, we found that the pollen produced on plants derived from large pollen loads grew faster in vitro than the pollen produced on plants derived from small pollen loads. These findings indicate that pollen competition affects the performance of the resulting sporophytic generation and the microgametophytes they produce.
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