ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented on the effects of low-temperature (∼540 °C) annealing, with and without an As overpressure, on the native oxide of AlxGa1−xAs formed via water vapor oxidation at elevated temperature (∼425 °C). Auger electron spectroscopy data show the Al to be oxidized while the Ga remains unoxidized after the water vapor oxidation of AlxGa1−xAs. Transmission electron microscopy data show a possible composition or phase change upon annealing with an As overpressure. Electron diffraction data indicate that the as-oxidized AlxGa1−xAs is a combination of four possible phases of Al2O3, η, γ, δ, χ, or AlO(OH). Supporting secondary-ion mass spectrometry data are also presented. Ellipsometer measurements indicate an index of refraction n=1.63 (λ=6328 A(ring)) for the native oxide. Ellipsometer measurements of the oxidized and annealed samples show the creation of a region 300–550 A(ring) thick at the oxide-semiconductor interface with n=2.78–2.93.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354482
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