Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 5014-5016
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured electron and hole impact ionization coefficients in biaxially strained InxGa1−xAs/InyAl1−yAs (0.44≤x≤0.62, 0.44≤y≤0.62) multiquantum wells for the first time. It is seen that β/α is enhanced due to strain-induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strain in the barrier. The results have been interpreted by considering band-to-band impact ionization and band-edge discontinuity impact ionization processes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353822
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