Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 3025-3026
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnSe epitaxial layers grown by gas source molecular beam epitaxy were etched by reactive ion etching (RIE) with a gas mixture of ethane and hydrogen (C2H6/H2). Smooth etching surfaces were obtained under the following RIE conditions: an ethane concentration (flow fraction) of 3%, total flow (C2H6+H2) of 55 sccm, total pressure of 15 Pa and radio frequency power density of 0.6 W/cm2. This ethane concentration is smaller than that in III–V semiconductors, 5%–7%. The etching rate of ZnSe was 21 nm/min and smaller than that of III–V semiconductors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106797
Permalink
|
Location |
Call Number |
Expected |
Availability |