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  • American Institute of Physics (AIP)  (5)
  • Oxford University Press  (1)
  • Wiley-Blackwell  (1)
  • 1990-1994  (7)
  • 1960-1964
  • 1991  (7)
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  • 1990-1994  (7)
  • 1960-1964
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  • 1
    Publication Date: 1991-09-01
    Print ISSN: 0956-540X
    Electronic ISSN: 1365-246X
    Topics: Geosciences
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3860-3864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions for the preparation of nominally undoped semi-insulating (SI) InP wafers by annealing under controlled phosphorus pressure are described. It is demonstrated by the results of electrical profile measurements (differential Hall effect) and by photoluminescence that diffusion effects in a thin peripheral layer (≈20 μm) can be correlated to a phosphorus in- and indium out-diffusion. But diffusion of these species is correlated to a donor behavior and relatively slow. It can, therefore, not be used to explain the SI bulk property which seems not to depend on the phosphorus overpressure during annealing.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 956-957 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductive response of hydrogenated amorphous silicon (a-Si:H) p-i-n diodes has been investigated under conditions of low-temperature operation. We show that cooled p-i-n diodes exhibit an enhanced infrared response when operated under forward bias conditions. The induced IR response is of the order of 10−3A/W, extending out to wavelengths of about 2–3 μm with the long wavelength cutoff being determined by the properties of the glass/indium–tin–oxide entrance window. We propose that the IR photoeffect is due to the re-excitation of band-tail trapped excess carriers injected into the localized conduction and valence band tail states in the vicinity of the n+- and p+-contact regions.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The increase in the microwave surface resistance Rs of high Tc superconductors at elevated microwave power levels is reported for both oriented and unoriented Tl-based films as a function of rf magnetic field at 820 MHz and 18 GHz. The application of dc magnetic fields produces qualitatively similar increases in Rs and in the surface reactance Xs. The increase in Rs with dc field is shown to arise from simple decoupling of grains by intergranular magnetic flux. The increase in Rs with microwave power, on the other hand, is a consequence of hysteretic intergranular processes.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2231-2233 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate experimentally that the far-infrared photoresponse of GaAs/AlGaAs heterostructures at photon energies corresponding to cyclotron resonance absorption is strongly enhanced in the adiabatic transport regime of the quantum Hall effect (QHE). Ideal adiabatic transport is characterized within the edge channel picture of the QHE by the absence of interedge channel scattering. We realize adiabatic transport by the means of a multiple gate finger structure, which is used for a selective population of the edge channels. The cyclotron resonance absorption is interpreted as an additional interchannel scattering process increasing the magnetoresistance.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2136-2138 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning tunneling microscope (STM) is used to locally modify p-n junctions on a scale of a few tens of nanometers. The p-n junction is composed of a phosphorus-doped, hydrogenated amorphous Si [a-Si:H(P)] layer deposited on heavily doped p-type crystalline Si(111). Under conditions of high current densities, with the p-n junction biased in forward direction, the a-Si:H layer is structurally changed leading to a decrease of the junction barrier height. The resulting exponential increase of hole injection into the modified amorphous layer leads to electronically active structures. They are detected by STM owing to their differing electronic properties.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 0947-5117
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: The radiotracer technique as a means to investigate the corrosion of zirconium, tantalum, and a Ta-40Nb alloy in fluoride containing azeotropic nitric acidZirconium and tantalum as well as the tantalum 40% niobium alloy are of considerable technical importance due to their high corrosion resistance against numerous corrosive media. With respect to corrosion testing in analytically pure azeotropic nitric acid in the temperature range between 20 and 121°C, corrosion rates were determined for zirconium: 7 · 10-6 to 5 · 10-4 mm/y, for tantalum: 10-8 to 4 · 10-6 mm/y, and for the Ta-40Nb alloy: 2 · 10-7 to 8 · 10-6 mm/y [1]. These corrosion rates will be markedly increased by adding small amounts of fluorides or by fluoride impurities.The radiotracer method after neutron activation was applied to determine the corrosion rates in azeotropic fluoride containing nitric acid. Even minute additions of fluorides strongly affect the corrosion resistance of zirconium. In the range between 0.15 and 10 ppm F- and at a temperature of 108°C, corrosion rates between 5.3 · 10-3 and 3.1 mm/y were measured. It was impossible to establish a limit for the fluoride concentration, below which the corrosion rate of zirconium will not be adversely influenced.The corrosion rates of tantalum and the Ta-40Nb alloy are considerably increasing above a fluoride concentration of 10 ppm. The highest corrosion rates measured were between 8.4 · 10-3 mm/y at 50°C/280 ppm F- and 1.4 · 10-2 mm/y at 110°C/320 ppm F-. Within the range of this investigation, the corrosion resistance of tantalum was higher than that of the Ta-40Nb alloy by one order of magnitude.The corrosion resistance of zirconium and tantalum was not influenced by any treatment of the samples before testing.
    Notes: Wegen ihrer hohen Korrosionsbeständigkeit gegenüber zahlreichen Angriffsmitteln sind Zirconium und Tantal sowie die Legierung Tantal-40Niob von großer technischer Bedeutung. Die bisher in azeotroper Salpetersäure p.a. zwischen 20 und 121°C gemessenen Abtragungsraten liegen für Zirconium zwischen 7 · 10-6 und 5 · 10-4 mm/a, für Tantal zwischen 10-8 und 4 · 10-6 mm/a und für die Legierung Ta-40Nb zwischen 2 · 10-7 und 8 · 10-6 mm/a [1]. Diese Abtragungsraten werden durch geringe Fluoridzustände oder -verunreinigungen wesentlich erhöht.Mit der Radiotracermethode nach Neutronenaktivierung wurden die Abtragungsraten in azeotroper, fluoridhaltiger Salpetersäure bestimmt. Zirconium ist schon gegen kleinste Fluoridspuren sehr empfindlich. Im untersuchten Bereich von 0.15 bis 10 ppm F- liegen bei 108°C die Abtragungsraten zwischen 5.3 · 10-3 und 3.1 mm/a. Eine Grenzkonzentration, unterhalb der das Fluorid die Korrosionsgeschwindigkeit nicht mehr beeinflußt, kann für Zirconium nicht angegeben werden.Bei Tantal und der Legierung Ta-40Nb nimmt oberhalb einer Grenzkonzentration von 10 ppm F- die Korrosionsgeschwindigkeit stark zu. Die höchsten Abtragungsraten liegen zwischen 8.4 · 10-3 mm/a bei 50°C/280 ppm F- und 1.4 · 10-2 mm/a bei 110°C/320 ppm F-. Dabei ist Tantal über den gesamten erfaßten Bereich um etwa das Zehnfache beständiger als die Legierung Ta-40Nb.Sowohl bei Tantal als auch bei Zirconium stellt sich die Abtragungsrate unabhängig von Vorbehandlungen ein.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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