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  • American Institute of Physics (AIP)  (4)
  • 2015-2019
  • 2005-2009
  • 1985-1989  (4)
  • 1989  (4)
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  • 2015-2019
  • 2005-2009
  • 1985-1989  (4)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Photoionization cross section of InP:Fe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3933-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral dependence of the photoionization cross section of Fe doped in InP is determined by photocapacitance spectroscopy. The optical process of the carrier emission from the deep acceptor level of Fe is discussed from the results. For the crystal-field-split level of Fe2+:5E, the photoionization cross sections for the fundamental transitions of 5E→Γ1 and Γ15→5E are adequately described by the Lucovsky model. Those optical thresholds are 0.63 and 0.78 eV, respectively, at 77 K. In comparison with the deep-level transient spectroscopy measurements, the following conclusions are obtained. The energy separation between the Fe acceptor level and the conduction-band edge is constant, but that between the Fe level and the valence-band edge varies correspondingly to the temperature variation of the InP band-gap energy. The fact that there is no difference between the optical and thermal activation energies for the 5E→Γ1 transition indicates that the Fe acceptor level is not perturbed by the InP lattice vibration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343358
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  • 2
    Electronic Resource
    Electronic Resource
    Photoionization cross section of In0.49Ga0.51P:Fe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect level. Optical thresholds for 5E and 5T2 of the crystal-field-split Fe acceptor level are 0.78 and 1.15 eV at 77 K. The small difference of 40 meV between the optical and thermal activation energies for the transition from the valence band to 5E reveals the weak coupling between the Fe acceptor level and the lattice vibration of InGaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100920
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 4
    Electronic Resource
    Electronic Resource
    Experimental analysis of phase-mode Josephson digital circuits (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 949-955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results on elementary phase-mode Josephson circuits whose combinations enable us to construct a total data processing system which is expected to be superior to the ordinary voltage-mode Josephson computer in several respects. In the phase-mode system a device depends for its operation on the existence of many stable states differing from one another by integer multiples of 2π in the phase plane. The total system is considered to be a prototype of quantum computer systems where physical quantum states are employed as logic states of information processing. By using the fabricated elementary circuits composed of SQUIDs and two types of branching points we have experimentally confirmed and, fan-out, fan-in operations, etc. We have also proposed an inhibit circuit, and presented the experimental results on the inhibit circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343524
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