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  • American Institute of Physics (AIP)  (2)
  • 1985-1989  (2)
  • 1989  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Changes in soft magnetic properties of Fe multilayered films due to lattice mismatches between Fe and intermediate layers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4338-4344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe multilayered films with various intermediate layers are formed. Their magnetic properties and film structures are examined to understand the mechanism originating soft magnetic properties. The soft magnetic properties change with the lattice mismatches between Fe and intermediate layers, showing low coercive force and high relative permeability at lattice mismatches from 0.4 to 1.2%. It is thought that the lattice mismatches above 0.4% decrease Fe crystallite size and improve soft magnetic properties. Although Fe crystallite size is small at the lattice mismatches above 1.2%, the soft magnetic properties are poor. This is because the large lattice mismatch increases internal stress and magnetic anisotropy energy. This report indicates that the good soft magnetic properties are obtained when both Fe crystallite size and internal stress are small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343981
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  • 2
    Electronic Resource
    Electronic Resource
    Band lineup for a GaInP/GaAs heterojunction measured by a high-gain Npn heterojunction bipolar transistor grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4898-4902 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInP(N)/GaAs( p) heterojunction bipolar transistor was fabricated by metalorganic chemical vapor deposition (MOCVD) for the first time. The common-emitter current gain exceeded 200 at a current density around 10 A/cm2 and the offset voltage was as small as 50 mV. Thermionic emission theory indicates that the conduction-band discontinuity (ΔEc) at GaInP/GaAs heterointerface is as small as 30 meV at room temperature and this value was more than 160 meV smaller than 0.19–0.22 eV obtained by the C-V profile method. The band-gap energy for MOCVD-grown GaInP was 60 meV smaller than the intrinsic band-gap energy (1.91 eV), but this value is too small to explain the difference between the present ΔEc value and the previously reported ΔEc value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343205
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    Paper (German National Licenses)
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