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  • American Institute of Physics (AIP)  (5)
  • American Association for the Advancement of Science (AAAS)
  • Amsterdam : Elsevier
  • 2000-2004
  • 1985-1989  (5)
  • 1989  (5)
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Years
  • 2000-2004
  • 1985-1989  (5)
Year
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 4619-4620 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The vibrational relaxation dynamics of CO chemisorbed on small Pt and Rh particles supported on SiO2 has been investigated by picosecond time-resolved infrared transient bleaching experiments. A vibrational T1 lifetime of ≈7 ps has been observed for several different samples, independent of polarization, pump intensity, and sample temperature from 100–400 K. A 1:3 isotopic dilution has no effect upon T1. This T1 lifetime is a factor of 10–50 times shorter than T1 reported for metal carbonyl cluster compounds in solution and on SiO2 supports. Two possible mechanisms are considered to account for the rapid T1 decay; redistribution of the energy throughout the broad CO vibrational band, and relaxation directly to electron–hole pairs in the metal particles.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3171-3180 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The A 3Π1←X 1Σ+ laser-induced fluorescence excitation spectrum of the NeIBr van der Waals complex is reported and analyzed to extract information regarding the structure and vibrational predissociation dynamics of the complex. While no definitive geometric information regarding NeIBr is obtained, our data indicate that a linear geometry is at least plausible. The vibrational predissociation lifetimes are a strong function of A state vibrational level and range from 2.6 to 23 ps. The variation in lifetime with vibrational level is consistent with the results of previous measurements on rare gas–halogen complexes, particularly NeBr2.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7037-7045 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Vibrational overtone photodissociation is used to examine the spectroscopy and vibrational predissociation lifetimes of HN3 in its ground electronic state. Direct overtone pumping of the N–H stretching levels 5νNH and 6νNH prepares molecules in selected states (v,J,K) near 15 100 and 17 700 cm−1 of vibrational energy; spin-forbidden NH(X 3 Σ−) dissociation fragments are detected by laser-induced fluorescence. Photodissociation spectra of beam-cooled HN3 display mixing of individual rotational levels of the nνNH vibrations with several background states, with derived coupling matrix elements in the range 0.01–0.1 cm−1. Vibrational predissociation lifetimes of mixed components of 5νNH are state specific, with variations of a factor of 2 for only 0.1 cm−1 energy differences. Average lifetimes for low J, K are 210 ns for 5νNH and 0.95 ns for 6νNH. The ratio of decay rates for the two overtone levels, k(6νNH)/k(5νNH)=220, is much greater than predicted by statistical theory, which gives a ratio of 4.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2207-2209 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth conditions on the stability of α-Sn films grown by molecular beam epitaxy on CdTe is studied. The growth conditions considered are substrate orientation, thickness, growth rate, and substrate temperature. The transition temperature from α-Sn to β-Sn, as determined by optical microscopy, is used as the measure of stability. It is shown that CdTe(110) is a somewhat better orientation than CdTe(100), and CdTe(111)B is totally unacceptable for the growth by molecular beam epitaxy of α-Sn films. The transition temperature from α-Sn to β-Sn shows a dependence on the total film thickness, with thinner films having a somewhat higher transition temperature than thicker. The quality of the films is the best when the growth rate is about 0.5 A(ring)/s and the growth temperature is about 75 °C. Since the transition from α-Sn to β-Sn starts at defects in the film, improving the quality of the film by lowering the growth rate and raising the growth temperature raises the transition temperature.
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  • 5
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Time-resolved x-ray scattering studies of phase transition kinetics have been carried out using the wide-bandpass monochromator and fast linear position-sensitive detector system at the IBM/MIT beamline X-20C at the National Synchrotron Light Source (NSLS). We report here on the instrumentation that has been developed for these studies, and in particular on the methods used to measure, change, and control sample temperature with millisecond resolution.
    Type of Medium: Electronic Resource
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