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  • 2005-2009  (25)
  • 1985-1989  (30)
  • 2006  (25)
  • 1989  (14)
  • 1988  (16)
  • 1
    Electronic Resource
    Electronic Resource
    Photoionization cross section of InP:Fe (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3933-3936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral dependence of the photoionization cross section of Fe doped in InP is determined by photocapacitance spectroscopy. The optical process of the carrier emission from the deep acceptor level of Fe is discussed from the results. For the crystal-field-split level of Fe2+:5E, the photoionization cross sections for the fundamental transitions of 5E→Γ1 and Γ15→5E are adequately described by the Lucovsky model. Those optical thresholds are 0.63 and 0.78 eV, respectively, at 77 K. In comparison with the deep-level transient spectroscopy measurements, the following conclusions are obtained. The energy separation between the Fe acceptor level and the conduction-band edge is constant, but that between the Fe level and the valence-band edge varies correspondingly to the temperature variation of the InP band-gap energy. The fact that there is no difference between the optical and thermal activation energies for the 5E→Γ1 transition indicates that the Fe acceptor level is not perturbed by the InP lattice vibration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343358
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  • 2
    Electronic Resource
    Electronic Resource
    Photoionization cross section of In0.49Ga0.51P:Fe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 529-531 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect level. Optical thresholds for 5E and 5T2 of the crystal-field-split Fe acceptor level are 0.78 and 1.15 eV at 77 K. The small difference of 40 meV between the optical and thermal activation energies for the transition from the valence band to 5E reveals the weak coupling between the Fe acceptor level and the lattice vibration of InGaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100920
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 4
    Electronic Resource
    Electronic Resource
    Experimental analysis of phase-mode Josephson digital circuits (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 949-955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results on elementary phase-mode Josephson circuits whose combinations enable us to construct a total data processing system which is expected to be superior to the ordinary voltage-mode Josephson computer in several respects. In the phase-mode system a device depends for its operation on the existence of many stable states differing from one another by integer multiples of 2π in the phase plane. The total system is considered to be a prototype of quantum computer systems where physical quantum states are employed as logic states of information processing. By using the fabricated elementary circuits composed of SQUIDs and two types of branching points we have experimentally confirmed and, fan-out, fan-in operations, etc. We have also proposed an inhibit circuit, and presented the experimental results on the inhibit circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343524
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  • 5
    Electronic Resource
    Electronic Resource
    Frequency characteristics of the Mn-doped InP p-n junction (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1961-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Admittance spectroscopy is applied to the analysis of the thermal properties of the Mn acceptor-doped InP grown by liquid-phase epitaxy. The thermal activation energy and capture cross section are determined as ΔET=183 meV and σp=1.8×10−13 cm2, respectively. The cutoff frequency of the emission of holes from the Mn acceptor is 1 GHz at 300 K. It is shown that the small signal frequency characteristic of a buried heterostructure laser is improved at frequencies f〉1 GHz by using the Mn-doped p-InP layer for the current blocking region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341094
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  • 6
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 574-576 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-doped semi-insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi-insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99861
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  • 7
    Electronic Resource
    Electronic Resource
    Evaluation of exciton absorption peak broadening factors in InGaAsP/InP multiple quantum wells (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2290-2292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We evaluated the magnitude of broadening factors of ground-state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW's) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100256
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  • 8
    Electronic Resource
    Electronic Resource
    Exact determination of superlattice structures by small-angle x-ray diffraction method (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 742-744 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of In1−xGaxAsyP1−y/InP superlattices (x=0.27 and y=0.60) is investigated by small-angle x-ray diffraction method. The interference peaks due to the superlattice structure were clearly observed up to the 6th order. The period of the superlattice was determined from the angular positions of the peaks using the modified Bragg's law. By analyzing the diffraction patterns of the first and the secondary peaks according to the optical multilayer theory, the thickness of each component (In1−xGaxAsyP1−y and InP) was uniquely determined within an error of ±1 A(ring). This method can be used to determine any type of superlattice structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99342
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  • 9
    Electronic Resource
    Electronic Resource
    Structure of a binuclear [(1R,2R)-N,N'-disalicylidene-1,2-cyclohexanediamine]titanium(IV) complex (1988)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 1309-1311 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270188003464
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  • 10
    Electronic Resource
    Electronic Resource
    Thin-layer chromatography of inorganic ions on polyethyleneimine cellulose in mixed sulfuric acid — Organic solvent media (1989)
    Springer
    Chromatographia 28 (1989), S. 620-622 
    Details
    ISSN: 1612-1112
    Keywords: Thin-layer chromatography (TLC) ; Polyethyleneimine (PEI) cellulose ; Sulfuric acid — organic solvent ; Inorganic ions ; Separations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary Thin-layer chromatographic behavior of 49 inorganic ions has been systematically studied on polyethyleneimine (PEI) cellulose with solvent mixtures consisting of sulfuric acid and either methanol or acetone. The sorption of most ions on the cellulose increases with increasing methanol content in the solvent. The feature is noticeable for some ions which form sulfato complexes. The Rf values of Re(VII) slightly increase with increasing methanol content. Ba(II), Hg(II), Pb(II), Pd(II), Au(III), Bi(III), Ru(III), Sb(III), Pt(IV), Mo(VI) and W(VI) are strongly retained on the layer in methanol media. The behavior of most ions in the acetone system does not appreciably differ from that in the methanol system, but their Rf values are somewhat higher in acetone than in methanol. There are marked differences in the behavior og Hg(II), Au(III), Ru(III) and Re(VII) between the two systems. Feasibilities for the separation of many ions of analytical interest are also demonstrated in these systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02260690
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