Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 185-186
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of ion implantation on recrystallization of films has been investigated using AlNx (x〈1) films as targets. The 750 A(ring) AlNx (x〈1) films were deposited on Si(111), glassy carbon, and commercial glass by an activated reactive evaporation method in a nitrogen atmosphere. The 80 keV N+ implantations were carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+ions/cm2 at 1×10−6 Torr. The x-ray diffraction patterns revealed that N implantation enhances a (002) orientation of AlN, growth of which depends on doses. The optical transmittance of the AlNx films is also improved by N implantation, depending on doses. N implantation into AlNx (x〈1) even without any annealing is effective for recrystallization of the films, which leads to improvement of optical properties.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100581
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