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  • American Institute of Physics (AIP)  (3)
  • 1985-1989  (3)
  • 1987  (3)
Collection
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  • 1985-1989  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Interchange stabilization of an axisymmetric single cell mirror using high-frequency electric fields (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 1869-1884 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stabilization of interchange instabilities in the Phaedrus tandem mirror [Phys. Rev. Lett. 51, 1955 (1983)] through the use of externally applied rf at a single frequency is demonstrated over a wide range of frequency (1.03Ωi 〈ω〈4.1Ωi). Here rf stabilized plasmas are reported with ion temperature up to 550 eV and beta up to 8%. Calculations of the rf electric fields show that the dominant mode is the m=+1 fast wave. When the rf frequency is near Ωi the calculated ponderomotive forces on ions and electrons are shown to be comparable. For ω〉1.3Ωi it is shown that the force acts primarily on electrons. Stable plasmas are only achieved when the net radial ponderomotive force is calculated to be stabilizing and comparable to the curvature force. Results are also reported for rf applied simultaneously at two frequencies, one which is stabilizing and one which is destabilizing. Abrupt changes in stability are observed as the rf power is increased whenever one of the rf frequencies is effective at plasma heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866201
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  • 2
    Electronic Resource
    Electronic Resource
    Electrostatic end plugging accompanied by a central-cell density increase in an axisymmetric tandem mirror (1987)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 30 (1987), S. 2855-2869 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrostatic end plugging is observed in a completely axisymmetric, three cell tandem mirror under conditions where the central-cell plasma density is always larger than the end-cell density. A factor of 4 increase in the central-cell density, to a maximum of 1.2×1013 cm−3 with simultaneous plasma beta of 13%, occurs upon application of the end plugging potential. Ion confining potentials of 25 V and 80 V at the two ends of the device, respectively, result in a factor of 2.5 increase in the axial confinement time for Tic =40 eV in agreement with the collisional flow model for ion confinement. The non-Boltzmann ion confining potential is caused by electron heating in the end cells by rf near the ion-cyclotron frequency. The initial central-cell density rise is caused by an increase in the ionization rate that occurs because of an increase in the electron temperature. The density remains high throughout the end-cell heating pulse as a result of increased particle confinement time. There is no nonambipolar radial ion loss in the core plasma (r≤16 cm) but inward radial transport of ions is observed at a rate consistent with ion–neutral collisions and a radial electric field in the negative radial direction. Steady-state thermal-barrier-like potential dips that are in agreement with the Boltzmann model for potentials are observed in the transitions between the central cell and the end cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.866050
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  • 3
    Electronic Resource
    Electronic Resource
    The first stages of oxidation of a-Si studied with Auger electron spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1054-1058 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the first stages of low-pressure oxidation of amorphous silicon using Auger electron spectroscopy. The application of the principal component analysis to the Si L2,3 core-valence-valence transition spectra, acquired during the oxidation, allows us for the interpretation of the oxidation kinetics of the a-Si. Using the target transformation method we have isolated the Auger spectra of the components present during the oxidation process. We observe an intermediate state in the Si-SiO2 interface formed during the oxidation. This state was attributed to a SiOx-type compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339763
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