Publication Date:
2014-09-16
Description:
The transmittance of tungsten oxides can be adjusted by oxygen vacancy ( V o ) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO 3-x planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO 3-x device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high V o s mobility was demonstrated in the WO 3-x film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of V o s was the physical origin for such unique switching characteristics.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
Permalink