Publication Date:
2013-03-15
Description:
Author(s): N. Q. Vinh, B. Redlich, A. F. G. van der Meer, C. R. Pidgeon, P. T. Greenland, S. A. Lynch, G. Aeppli, and B. N. Murdin Spectroscopic studies of the relaxation dynamics of excited single “acceptor” impurities in silicon, such as boron or aluminum, show that these impurities both have the potential to work as “qubits” and can also enrich trapped-atom experiments in solids. [Phys. Rev. X 3, 011019] Published Thu Mar 14, 2013
Keywords:
Research Articles
Electronic ISSN:
2160-3308
Topics:
Physics
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