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  • Articles  (72)
  • Articles: DFG German National Licenses  (72)
  • Wiley-Blackwell  (40)
  • American Institute of Physics (AIP)  (32)
  • Oxford University Press
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3490-3497 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper reports results of an experiment involving two-laser resonance-enhanced photoionization of benzene. The excitation sources were two frequency-doubled dye lasers. The first laser pumped the molecule to a selected vibronic level of its first excited singlet state (1B2u), from where it was ionized by a time-delayed pulse of the second laser. The ion yield depends on the intermediate vibronic state as well as on the wavelength of the ionizing laser. From the structures and intensities of the measured ion spectra we derived vibrational frequencies and molecular parameters of the ground electronic state of the ion to a remarkable accuracy. The contributions of autoionizing Rydberg levels to the ionization cross section can clearly be distinguished from direct ionization. Several resonance peaks were assigned to transitions to vibrational modes within these Rydberg states.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 810-821 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper reports the results of an extensive study of the internal energy-transfer processes that occur in benzene–argon collisions. We used laser-induced fluorescence and information theory for determining the energy-transfer rates between internal states of benzene in the ground electronic state (1A1g). The method provides an estimate for the rate of rotational relaxation. It gives a measure of the fraction of molecules that absorb the laser radiation at a frequency near the center of the ν18 absorption band of benzene. The use of information theory gives estimates for all of the vibrational energy transfer rates. These fit the experimental data reasonably well. However, some of the data do deviate from the information theory model. This suggests that the statistical assumptions of the model are not sufficiently restrictive. One such restriction may be in the number of vibration quanta changing per collision..
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in liquid-encapsulation Czochralski (LEC) grown p-type InP:Fe codoped with Zn have been investigated by means of temperature-dependent Hall-effect (TDH), deep-level transient spectroscopy (DLTS), calorimetric absorption spectroscopy, and electron spin resonance measurements. Although a dominant deep hole trap is revealed both by DLTS and TDH measurements in the vicinity of the valence band edge at EV+0.2 eV, the spectroscopic analysis unambiguously invalidates previous speculations on the existence of a second energy level of the isolated iron impurity in the band gap of InP, i.e., a Fe4+/Fe3+ donor level. From the axial concentration profile and a comparison with a LEC-grown p-type InP crystal doped with Zn only it seems that the trap is not even iron-related in contrast to tentative assignments often found in the literature. Native or Zn-related defects which depend on the particular growth conditions used are assumed to account for this level.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1564-1566 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We consider a sharply defined doping layer near the interface of a heterostructure on the narrow-gap side. It is shown that an interface-induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the barrier height is compared with a self-consistent, nonparabolic subband calculation.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 757-759 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the surface resistance of two c-axis oriented YBa2Cu3O7−x thin-film samples in a copper host cavity at 86.7 GHz between 4.2 and 300 K. High quality films of 0.6 and 0.4 μm thickness have been grown epitaxially on SrTiO3 by pulsed excimer laser ablation. Their millimeter wave absorption drops sharply at a transition temperature of 86 and 88 K to a corresponding surface resistance at 77 K of 18 mΩ and less than 8 mΩ, respectively. These values exceed the best results on polycrystalline samples and come close to the expectation from classical superconductors. Therefore, applications of high Tc superconductors up to THz frequencies can be envisaged now.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6947-6950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence and evolution of traps in undoped semi-insulating (SI) InP obtained by high temperature annealing (900 °C for 90 h) in poor or rich phosphorus atmosphere has been studied by means of photoinduced current transient spectroscopy. Six traps named A1 to A6 having activation energies ranging from 0.2 to 0.6 eV have been detected in three samples submitted to the same annealing process. The samples differ in the Fe concentration of the starting material and the applied phosphorus pressure in the annealing process. A comparison of the corresponding photoinduced current transient spectroscopy spectra shows that among the observed traps, the 0.2 eV one can be related to a phosphorus deficiency, and the 0.3 eV and 0.4 eV traps could be due to an excess of phosphorus during annealing. Moreover, the trap corresponding to iron (0.6 eV) has been observed in all the studied samples. © 1996 American Institute of Physics.
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  • 7
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The early state of spinodal decomposition was studied by small angle neutron scattering in the critical mixture of the isotopic blend deutero-polystyrene/polystyrene (d-PS/PS) of equal molecular volume of 1.42×106 cm3/mol in a temperature range 12 K≤||Tc−T||≤82 K. This process can be described by the relaxation between two static structure factors, S(Q) representing the equilibrium values of the system in the mixed state and at the temperature where phase separation occurs. The time evolution of the relaxation process is described by the dynamical structure factor, L(Q,t) which depends on the dynamic properties of the mixture. It will be shown that the static structure factor of a mixed system can also be determined in the unstable two-phase region during the early state of spinodal decomposition. Consistent values for the Flory–Huggins parameter were found in comparison with a lower molecular d-PS/PS sample and, therefore, a lower critical temperature which was even smaller than the phase separation temperatures of the present system.The observed time evolution of the fluctuation modes is nonexponential. Therefore, it was originally supposed that internal modes of the coil come into play. The analysis of the data with an ansatz by Akcasu, which takes internal modes into account showed, however, that the phase separation in the experimental range of wave number and time is dominated by the centre of mass diffusion as in the C–H–C case and the nonexponential behavior was attributed to a time dependent increase of the "range'' of the Onsager coefficient. A range of the Onsager coefficient larger than the radius of gyration of a single coil is predicted in case of entangled polymers. However, no time dependence was predicted so far. The evaluated diffusion constants follow an Arrhenius behavior and are consistent with earlier studies. They show a D0∝N−2 scaling consistent with reptation. A further result is the observation of a second order peak in the structure factor already in the early times of spinodal decomposition. So far, this was only attributed to the late state of spinodal decomposition. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5538-5545 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of heat treatment under phosphorus atmosphere on the balance of electronic levels by capacitance-voltage and deep level transient spectroscopy measurements. A series of special samples was annealed under the conditions which we are normally using for the processing of nominally undoped semi-insulating (S.I.) InP. It is shown explicitly that in this annealing process the reduction of the free-carrier concentration is predominantly caused by a reduction of the net concentration of defects related to shallow levels. Furthermore, we have identified in the annealed material two defects related to electron traps with activation energies of 400 and 600 meV, which are created or incorporated during the annealing with limited concentrations of about (0.5–1)×1015 cm−3. On the basis of these results we conclude that for the compensation mechanism in the annealed nominally undoped S.I. InP only a concentration below 1015 cm−3 of defects with a midgap energy level is necessary.
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of pure, nonhydrogenated amorphous silicon (a-Si) was modified by means of ion implantation, furnace annealing, and pulsed laser annealing. Defects in a-Si were probed by measuring the photocarrier lifetime τ at low carrier densities (1018/cm3) with subpicosecond resolution using pump-probe reflectivity measurements. The average cross section of defect-related midgap states for free-carrier capture is found to be 6×10−16 cm2. In addition, the average bond-angle distortion Δθ in a-Si was derived from Raman spectroscopy. Annealing as-implanted a-Si for 1 h at T≤500 °C induces defect annihilation as well as network relaxation. In contrast, 32 ns pulsed laser heating of a-Si just below the melting threshold leads to relaxation of Δθ without significant defect annihilation. This annealing behavior can be understood on the basis of defect diffusion kinetics. Implanting fully relaxed a-Si with 1 MeV B+, Si+, and Xe+ up to damage levels of 0.004 displacements per atom raises the defect density without affecting Δθ. Only after the defect density has saturated at higher damage levels is Δθ returned to the as-implanted level. The electronic density of states of a-Si is determined using optical-absorption spectroscopy, yielding Nsat≈0.5 at. % for the saturation defect density in a-Si at room temperature. Electron paramagnetic resonance shows that a minor fraction (0.02 at. %) of these defects is spin active. The response of c-Si and relaxed a-Si to implantation damage is comparable, suggesting that the defect populations in both materials are similar. Comparing carrier lifetime measurements and Raman spectroscopy for the various experimental treatments demonstrates that there is no unique correlation between the defect density and Δθ in a-Si. Assuming that defects and Δθ have independent enthalpic contributions, the Gibbs free energy of various structural states of a-Si is calculated. These calculations indicate that the melting temperature of a-Si may vary from 1010 to 1490 K.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBa2Cu3O7 have been prepared on SrTiO3 and LaAlO3 substrates by a high-pressure planar dc-sputtering technique. By covering the substrate heater with a frame of polycrystalline YBa2Cu3O7 substantial improvements of the YBa2Cu3O7 film properties were achieved. These are characterized by dc-resistivity values ρ(T) of less than 50 μΩ cm at 100 K and ρ(300 K)/ρ(100 K) values of up to 3.9. Significant deviations from the usual linear ρ(T) behavior were found. Critical temperatures above 90 K, resistive transition widths down to 0.3 K, and critical current densities of about 5 × 106 A/cm2 at 77 K confirm the high quality of the films. As indicated by Rutherford backscattering and high-resolution transmission electron microscopy the films exhibit a microstructure characterized by a reduced density of lattice defects. However, lattice-coherent precipitates with a diameter of about 5–10 nm were observed. As an outstanding feature the films exhibit, besides the initial steep falloff at Tc, a further gradual decrease of the microwave surface resistance at 87 GHz below 50 K by at least one order of magnitude. These results are very promising for millimeter-wave applications of epitaxial YBa2Cu3O7 thin films.
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