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  • Articles  (17)
  • Articles: DFG German National Licenses  (17)
  • 2000-2004  (7)
  • 1985-1989  (10)
  • 1
    Electronic Resource
    Electronic Resource
    Localization of virginiamycin S binding site on bacterial ribosome by fluorescence energy transfer (1986)
    s.l. : American Chemical Society
    Biochemistry 25 (1986), S. 3540-3547 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00360a011
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  • 2
    Electronic Resource
    Electronic Resource
    In Situ Measurement of Stress during Deposition of Boron Nitride Films (2000)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 347-349 (May 2000), p. 156-160 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.347-349.156.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-induced depletion of hydrogen from a soft carbonized layer (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3833-3837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft carbonized layers prepared in a glow discharge, with a hydrogen concentration of H:C∼4/3, are exposed to helium ion bombardment at energies between 0.3 and 2.6 MeV. A strong ion-induced depletion of up to 3×103 H atoms per incident 4He+ ion is observed by means of high-energy ion beam analysis. The hydrogen release is shown to be a local process, with the electronic energy deposition as the main responsible mechanism. The results are successfully compared to a model which takes into account local bond breaking and retrapping and the local formation of hydrogen molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343399
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  • 4
    Electronic Resource
    Electronic Resource
    Dynamic depth profile measurements of implanted deuterium in nickel (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1893-1897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 10-keV deuterium implanted in nickel were obtained during implantation through elastic recoil detection between 233 and 313 K. The profiles were allowed to reach saturation at each measured temperature. At the lowest temperature, measurements with various implantation fluxes were performed. Aside from surface peaks, the depth profiles show a uniform density of deuterium in the implanted layer and the shape of these profiles is independent of the sample temperature or implantation fluence or flux. The temperature and fluence dependence could be successfully reproduced with a trapping-detrapping model considering three different trap binding energies. Two of the model parameters are in good agreement with previous calculations performed to reproduce reemission measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342900
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  • 5
    Electronic Resource
    Electronic Resource
    On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high-fluence D+ irradiation at elevated temperature (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3400-3406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On Fe films evaporated on pyrolytic graphite, thick C layers segregate during high-temperature (above about 800 K) light ion irradiation if the penetrating ions are energetic enough to reach the Fe-graphite interface. The thickness of the C segregated layer and the C depth distribution in the Fe film have been determined with 2-MeV 4He+ Rutherford backscattering. A steady-state carbon overlayer is reached at high fluences (above about 1019 particles/cm2), the thickness of which depends on the energy of the irradiating beam for a given thickness of the Fe evaporated film. The anisotropic structure of the pyrolytic graphite substrate influences the thickness of the steady-state C overlayer, thicker C layers being measured for edge-oriented C substrates. Using the Monte Carlo code trim, the production of defects in the graphite substrate has been calculated for different thicknesses of the C overlayer. The total amount of defects produced in the graphite substrate has been identified as the parameter regulating the growth and the steady-state value of the C overlayer. With the depth distributions of defect production generated by trim as source functions, the diffusion of C interstitials in graphite under the influence of recombination with vacancies has been modeled. The segregating C fluxes are identified with the fluxes of interstitials arriving at the Fe/graphite substrate interface for a suitable choice of the parameters in the diffusion equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342656
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling of hydrogen implantation into graphite (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4860-4866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new theoretical framework has been developed which is applicable to the implantation and ion-induced release of hydrogen isotopes in graphite. It provides a physical basis and a refinement of the predictions of the simple model of local saturation and mixing. The model treats the trapping at defects and a local release of trapped atoms by nuclear knock-on. Ion deposition and damage functions are taken from trim simulations. The detrapped atoms may become retrapped or recombine to molecules, which then are transported to the surface by fast molecular diffusion, and subsequently released. By the choice of suitable rate constants in the model calculations, different experimental findings for the implantation and high-fluence self-reemission of deuterons in graphite may be explained consistently. Examples cover the saturation as a function of temperature and energy, depth profiles, gas reemission, thermal desorption, and effects of predamage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341234
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  • 7
    Electronic Resource
    Electronic Resource
    Permeation of implanted deuterium through Ni near room temperature (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2733-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The permeation of 2–22-keV deuterons implanted into 25-μm-thick cold-rolled Ni foils was studied near room temperature. The results are generally characterized by a time lag τ and a steady-state permeation rate J. The variation of τ with beam intensity and temperature indicates an average relative concentration of ∼4×10−4 of saturable bulk traps of binding energy 0.26±0.01 eV, plus a larger concentration of weaker traps. At the highest energy, J is well described by theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335415
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 55-57 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430268
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  • 9
    Electronic Resource
    Electronic Resource
    The nitrogen transport in austenitic stainless steel at moderate temperatures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the transport of nitrogen in austenitic stainless steel at temperatures around 400 °C is presented and discussed. The model considers the diffusion of nitrogen under the influence of trapping and detrapping at trap sites formed by local chromium. Nitrogen depth profiles simulated on the basis of the model with diffusion and detrapping activation energies of 1.1 and 1.45 eV, respectively, are in good agreement with experimental nitrogen profiles. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126294
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanism of diffusional transport during ion nitriding of aluminum (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400 °C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126070
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