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  • Articles  (33)
  • Articles: DFG German National Licenses  (33)
  • 1995-1999  (33)
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  • Articles  (33)
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  • 1
    Electronic Resource
    Electronic Resource
    An improved formulation of the oxygen-diffusion problem and its application to Zircaloy oxidation by steam (1997)
    Springer
    Oxidation of metals 47 (1997), S. 427-444 
    Details
    ISSN: 1573-4889
    Keywords: modeling ; numerical techniques ; finite-difference methods ; diffusion ; moving boundary problem ; steam oxidation ; Zircaloy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Numerical solutions of the oxygen-diffusion problem arising in the oxidation of metals at high temperatures are complicated by the change in density as the oxide is formed and the occurrence of moving boundaries separating the different phases. The former complication is resolved by a transformation of the dependent variable and the coordinate, which reduces the problem to a form identical to one without density change. The latter complication is dealt with by demonstrating an analogy with the Stefan problem in heat transfer with phase change in the enthalpy formulation, for which abundant numerical works exist. A finite-difference code is written to solve the resulting equations. It is successfully applied to simulate an oxidation experiment of Zircaloy by steam at 1600°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02134785
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  • 2
    Electronic Resource
    Electronic Resource
    A magneto-optical study of interdiffusion in InGaAs/InP quantum wells: Effects of heat treatment, substrates, and dopants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6826-6833 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion in InGaAs/InP quantum wells has been studied using magneto-optical transmission spectroscopy. The effects of dopants in the substrates and quantum wells, overgrowth and annealing processes have been investigated, providing useful information on the interdiffusion effects in typical growth and fabrication processes. The blue shift effect which is often observed in multiple quantum well (MQW) structures subjected to heat treatment, is attributed to a dominant group V interdiffusion which can be suppressed by high defect densities in the substrate. The presence of Zn-dopants in an overgrown layer on top of the MQW structures causes a counteractive redshift effect after long annealing times due to group III diffusion, but in situ Zn- or S-dopants produce no observable shift in transition energies due to interdiffusion. This is attributed to enhanced group III interdiffusion induced by Zn diffusion into the MQWs. We conclude that there are very different interdiffusion mechanisms for group III and group V elements and support the recent suggestion of vacancy-related group V interdiffusion in contrast to the interstitialcy mechanism for the group III interdiffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361504
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  • 3
    Electronic Resource
    Electronic Resource
    Lateral mode behavior of reactive-ion-etched stable-resonator semiconductor lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4294-4296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results on monolithic stable-resonator semiconductor lasers. Curved end mirrors defining a near-concentric stable resonator were fabricated on wide-stripe GaAs/AlGaAs GRINSCH-SQW lasers using reactive-ion-etching. These lasers oscillate in close to the expected lowest-order Gaussian stable-resonator modes at threshold, evolving into a coherent superposition of higher-order modes as the pump current is increased up to two to three times threshold. At higher pump currents nonlinear defocusing effects cause the resonators to become geometrically unstable so that the lateral modes are determined by both the resonator geometry and the saturated gain and index profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359831
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: "Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method" [Appl. Phys. Lett. 74, 1221 (1999)] (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2151-2151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124947
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  • 5
    Electronic Resource
    Electronic Resource
    Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3569-3571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detection of continuous-wave terahertz (THz) radiation has been demonstrated in GaAs/AlGaAs coupled quantum well p-i-n photodiodes by intrasubband absorption. The sharp interwell tunneling resonances observed in the photocurrent are highly sensitive to temperature, and the carrier temperature increase caused by the absorption of THz radiation is found to affect the photocurrent in a qualitatively similar manner. We find that the effect results in detectivities of THz radiation around 1 mA/W for a photocurrent signal of 100 nA. We discuss the functionality of our device in the context of an "optical/THz mixer,'' where the mixing occurs between the modulation frequencies of the applied THz and visible light fields. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117248
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  • 6
    Electronic Resource
    Electronic Resource
    Further evidence for the quantum confined electrochemistry model of the formation mechanism of p−-type porous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3399-3401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two types of p− porous silicon (PS) were formed in HF solutions of different concentrations. One type with nanoscale (NS) dimensions of about 3 nm and the other with dimensions of about 5 nm. PS samples formed in the lower concentration of HF were anodized again in the higher concentration of HF and vice versa. The photoluminescence peak position and, thus, the size of NS units of PS were found to be related to the concentration of HF in which the PS is formed, independent of the forming time. The larger NS units of PS can be further electrochemically etched by anodization, while the smaller ones cannot. These results give a confirming evidence for the quantum confined electrochemistry model of the formation mechanism of PS based on the quantum confinement effect and classical electrochemical theory [S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. 62, 642 (1993)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117272
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3711-3713 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric SrBi2Ta2O9 thin films have been deposited on the Bi4Ti3O12 buffered Pt/Ti/SiO2/Si substrates using the metalorganic decomposition technique at annealing temperatures ranging from 600 to 750 °C. No pyrochlore phase was found in the SrBi2Ta2O9 thin films although the Bi2Ti2O7 phase appeared in the Bi4Ti3O12 buffer layers. A SrBi2Ta2O9 film with (200) predominant orientation was formed at 650 °C. The effects of the Bi4Ti3O12 buffer layer and post-annealing temperature on the structure, surface morphology, and electrical properties of SrBi2Ta2O9 thin films were analyzed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123229
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  • 8
    Electronic Resource
    Electronic Resource
    Phonon-boundary scattering in thin silicon layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1798-1800 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature fields in microdevices made from silicon-on-insulator (SOI) wafers are strongly influenced by the lateral thermal conductivity of the silicon overlayer, which is diminished by phonon scattering on the layer boundaries. This study measures the thermal conductivity of single-crystal silicon layers in SOI substrates at temperatures between 20 and 320 K using Joule heating and electrical-resistance thermometry in microfabricated structures. Data for layers of thickness between 0.4 and 1.6 μm demonstrate the large reduction resulting from phonon-boundary scattering, particularly at low temperatures, and are consistent with predictions based on the phonon Boltzmann transport equation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119402
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  • 9
    Electronic Resource
    Electronic Resource
    Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1221-1223 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrBi2Ta2O9 (SBT) ferroelectric thin films were prepared by metalorganic decomposition on Pt/Ti/SiO2/Si substrates at annealing temperatures ranging from 600 to 750 °C. The SBT thin films were annealed layer by layer during the spin-coating process using a rapid thermal annealing (RTA) furnace. The relative intensity of (200) peak in x-ray diffraction increased with the increase of the annealing temperature. A (200)-predominant film can be formed at 700 and 750 °C. For the film annealed by RTA furnace at 650 °C, the remanent polarization (2Pr) and coercive field (2Ec) were 19.8 μC/cm2 and 116 kV/cm, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123505
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  • 10
    Electronic Resource
    Electronic Resource
    Electron field emission from SiC/Si heterostructures synthesized by carbon implantation using a metal vapor vacuum arc ion source (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1926-1928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A remarkably low turn-on field of about 1 V/μm has been observed in electron field emission from planar SiC/Si heterostructures formed by high dose C implantation into Si using a metal vapor vacuum arc ion source. An implant energy of 35 keV was used to a dose of 1.0×1018 ions/cm2 with subsequent annealing in nitrogen at 1200 °C for 2 h. X-ray photoelectron spectroscopy showed that a thin surface stoichiometric SiC layer, with a thickness of about 150 nm, had been formed. Atomic force microscopy showed that there are densely distributed small protrusions formed on the surface. The formation of a thin surface stoichiometric SiC layer and the formation of densely distributed small protrusions on the surface are believed to be the two factors responsible for the efficient electron field emission.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121229
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