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  • 1
    Electronic Resource
    Electronic Resource
    Semiconducting Nanowires: Properties and Architectures (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 99-100 (July 2004), p. 109-116 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The paper describes the use of an in-situ microscopy technique, which combinestransmission electron microscopy (TEM) with scanning probe microscopy (SPM), to investigate the electrical and mechanical properties of individual silicon and germanium nanowires. Additionally, the formation of ordered arrays of size-monodisperse silicon and germanium nanowires within mesoporous silica powders and thin films using a supercritical fluid inclusion phase technique is described. In particular, we demonstrate ultra high-density arrays of germanium nanowires, up to 2x 1012 wires per square centimetre. These matric embedded nano-composite materials display unique optical properties such as intense room temperature ultraviolet and visible photoluminescence
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.99-100.109.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial combination of NdBa2Cu3O7−δ /SrTiO3: growth characteristics, structure, and parameters (1999)
    Springer
    Physics of the solid state 41 (1999), S. 355-361 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have studied the growth characteristics, structure, and parameters of the epitaxial heterostructures (001)NdBa2Cu3O7−δ /(100)SrTiO3/(001)NdBa2Cu3O7−δ grown by laser ablation on a (100)LaAlO3 substrate with a thin (∼2 nm) YBa2Cu3O7−δ intermediate layer. The use of an YBa2Cu3O7−δ intermediate layer promotes layered growth of the (200 nm) NdBa2Cu3O7−δ layer, whose free-surface roughness is 4–5 nm. The resistance of the NdBa2Cu3O7−δ layers began to fall off abruptly at T=92 K, and at T≈87 K it vanished completely. The critical current density in the NdBa2Cu3O7−δ layers at T=76 K exceeded 106 cm2 A/cm2. The dielectric constant of the (400 nm) SrTiO3 layer sandwiched between the NdBa2Cu3O7−δ epitaxial layers grew by roughly threefold as the temperature was lowered in the interval 300–4.2 K. When a bias voltage of ±2.5V was applied to the NdBa2Cu3O7−δ electrodes, the relative dielectric constant of the (400 nm) SrTiO3 intermediate layer fell from 1150 to 400 (T=32 K, f=100 kHz). The conductivity of the SrTiO3 intermediate layer in the direction perpendicular to the substrate plane increased with temperature and the electric field strength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130783
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  • 3
    Electronic Resource
    Electronic Resource
    C-oriented SrBi2Nb2O9 films grown on YBa2Cu3O7−δ /SrTiO3 and NdGaO3 (1997)
    Springer
    Physics of the solid state 39 (1997), S. 598-601 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Epitaxial SrBi2Nb2O9 films were grown by laser ablation on (001)YBa2Cu3O7−δ /(100)SrTiO3 and (001)NdGaO3, with c axis normal to the substrate plane. The SrBi2Nb2O9 films were grown in a layer-by-layer regime on NdGaO3 substrates in 25-Å steps at a condensation temperature of 700 °C. Microinclusions of secondary phases and a-oriented grains were observed to exist on the surface of (001)SrBi2Nb2O9 films grown on (001)YBa2Cu3O7−δ /(100)SrTiO3. The dielectric permittivity of the SrBi2Nb2O9 films measured along the c axis is 123 (T=300 K, f=100 kHz), and tan δ≈0.04.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130149
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  • 4
    Electronic Resource
    Electronic Resource
    Transport parameters of granular La0.67Ca0.33MnO3 films grown on an R-plane sapphire (2000)
    Springer
    Physics of the solid state 42 (2000), S. 2103-2108 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Precisely (100)-oriented, 200-nm thick La0.67Ca0.33MnO3 films have been grown by laser ablation on a sapphire (R-plane) substrate covered by a (100)SrTiO3/(001)Bi2SrNb2O9/(001)CeO2 trilayer buffer. The azimuthal misorientation of crystal grains (50–300 nm) in the La0.67Ca0.33MnO3 films decreased by about 40% as the condensation temperature was increased ered from 760 to 810° C. The lattice parameter of the grown manganate films was reduced to 3.81–3.82 Å by enriching them with oxygen. The maximum in the temperature dependence of the electrical resistivity of the La0.67Ca0.33MnO3 films grown was shifted toward lower temperatures by 20–50 K relative to its position for bulk ceramic samples of a stoichiometric composition. The largest magnetoresistance (MR=42% at H=0.4 T) was found in La0.67Ca0.33MnO3 films with a Mn4+ concentration on the order of 50% (T=166 K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1324047
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  • 5
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−δ /CeO2 heterostructures on sapphire R-plane (1998)
    Springer
    Physics of the solid state 40 (1998), S. 183-186 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract (001)YBa2Cu3O7−δ epitaxial films were prepared by laser ablation on $$(1\bar 102)Al_2 O_3 $$ surface. A thin (001)CeO2 or (111)CeO2 buffer layer was deposited between the substrate and the superconductor film to reduce their chemical interaction. In the initial stages of CeO2 buffer formation, its orientation depended strongly on the intensity of cerium ion interaction with oxygen. Epitaxial growth of (001)YBa2Cu3O7−δ films was achieved both on $$(001)CeO_2 //(1\bar 102)Al_2 O_3 $$ and $$(111)CeO_2 //(1\bar 102)Al_2 O_3 $$ . The T c temperature of epitaxial (001)YBa2Cu3O7−δ films was within 88–90 K, and the current J c at 77 K was in excess of 106 A/cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130267
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  • 6
    Electronic Resource
    Electronic Resource
    Free charge carriers and the cathodoluminescence of NaI crystal
    Amsterdam : Elsevier
    Solid State Communications 80 (1991), S. 63-66 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(91)90599-Q
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  • 7
    Electronic Resource
    Electronic Resource
    Scanning probe microscopy of intrafibrillar crystallites in calcified collagen (1994)
    Springer
    Journal of materials science 5 (1994), S. 200-206 
    Details
    ISSN: 1573-4838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine , Technology
    Notes: Vertebrate mineralized tissues are composite materials formed by the organized growth of carbonated apatite crystals within a matrix of collagen fibres. Calcified collagen from turkey tendon was investigated using scanning tunnelling microscopy (STM) and atomic force microscopy (AFM). Samples were treated with hydrogen peroxide to enhance the mineralized phase by removing part of the collagen matrix and the results compared with the untreated material. Plate-like crystalline entities with dimensions 35 nm × 5–8 nm by ∼ 1.5 nm were seen. These dimensions are consistent with previous reports using transmission electron microscopy (TEM) of calcified tendon and topographic imaging of tendon crystals. The resolution of the images obtained using STM is better than the previously reported pictures obtained using TEM or scanning electron microscopy (SEM). The value of 35 nm is the same as the gap region in the structure of the collagen fibrils. Stacking of plates and plate-aggregates are a dominant feature in the scanning images. These results support the concept of organized intra-fibril mineral crystals within the organic collagen matrix. Electron diffraction and X-ray diffraction were undertaken on the samples and the patterns recorded match those previously reported for carbonated apatite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00121089
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  • 8
    Electronic Resource
    Electronic Resource
    Screw-like structures in ex situ Tl2Ba2CuO6 films (1998)
    Springer
    Applied physics 66 (1998), S. 1223-1226 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 74.70; 68.55; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 2 Ba2CuO6 films on single-crystal LaAlO3 was investigated using atomic force microscopy and X-ray diffraction. Most of the film surface consisted of flat areas separated by single or several unit-cell steps. This morphology suggests that the films grow predominantly by a step-flow mechanism. A Tl-2201 film grown using a precursor film deposited at 700 °C exhibited stacks of planes arranged in a screw-like manner on a flat background. Islands of 1–3 μm size and a height of 2–20 unit cells were dominant structures on the surface. Possible causes for the formation of the screw-like structures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/
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  • 9
    Electronic Resource
    Electronic Resource
    Studies of the initial oxidation of cobalt in alkaline solutions using scanning electrochemical microscope (1998)
    Springer
    Applied physics 66 (1998), S. S477 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 82.45; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The AFM images clearly show a three-dimensional growth mechanism and that the initial oxidation starts at active sites at the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051186
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of Tl-2201 Superconducting Thin Films on Single Crystal LaAlO3 (1998)
    Springer
    Journal of superconductivity 11 (1998), S. 73-74 
    Details
    ISSN: 1572-9605
    Keywords: Thallium cuprates ; Tl-2201 ; thin films
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The growth of Tl-2201 films on LaAlO3 single crystal substrates has been investigated. The synthesis involved precursor films made by laser ablation that were treated with Tl2O(g) in near-equilibrium conditions. By optimising the method of preparation, we obtained films that were highly smooth, c-axis oriented and epitaxial. The rocking curve of the (0010) reflection had a FWHM of 0.27°. A Tc of 92K was achieved without post-annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1022638030511
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