ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this study the mechanism causing growth-induced anisotropy Kug in YBiCaGeSi-IG has been discussed and elucidated using the stepwise regression method by computer. In the stepwise regression analysis of a lot of the experimental data, we take Kug as a dependent variable Y, and Bi content, growth temperature Tg, film growth rate Vg, film thickness h, saturation magnetization 4πMs, rotation rate of substrates , Y content as predictors, X1, X2, X3, X4, X5, X6, X7, respectively. In our experiments, Bi content and saturation magnetization 4πMs of the samples were changed from 0.20 to 0.42 and from 330 G to 1008 G, respectively. When F-to-enter threshold F=0.5, 1, 2, 3, 4, the regression Eq. (3) is obtained as follows: Kug=−3.34×104+14.75×104Bi+33.43×4πM where multiple correlation coefficient R=0.86, standard error S3=0.675×104. Since F=15.6〉F0.01(2,11)=7.21 for the regression Eq. (3), it is significant at α=0.01 level of significance. This shows that there is an approximate linear relation between growth-induced anisotropy Kug and Bi content in films, and saturation magnetization 4πMs in YBiCaGeSi-IG material.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334669
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