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  • 1
    Electronic Resource
    Electronic Resource
    Extended travel ultrahigh-vacuum sample manipulator with two orthogonal, independent rotations (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1285-1287 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A UHV sample manipulator with greater than 22 in. of vertical translation and 360° of independent polar and azimuthal sample rotation is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1137993
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  • 2
    Electronic Resource
    Electronic Resource
    Growth oscillation decay rates for control of III–V molecular beam epitaxy near stoichiometry (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3070-3072 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the decay of reflection high-energy electron diffraction oscillations during growth of InAs (001), as a function of growth parameters, such as the V/III ratio. We have shown that the decay constants are sensitive to changes in growth morphology, as measured by scanning tunneling microscopy. Our experiments show that the values of these decay constants decrease at high V/III ratios, in agreement with previous work. Additionally, we have found that the values of the decay constants diverge as the transition between the (2×4) and (4×2) reconstructions is approached. We propose that the decay constants of the growth oscillations may be used as inputs for control of interface morphology. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126582
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  • 3
    Electronic Resource
    Electronic Resource
    In situ threshold photoemission yields correlated to surface reconstructions of InAs (001) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2354-2356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Threshold photoemission yields for As and In terminated reconstructions of InAs (001) are measured in situ and the variation of the photoyield is correlated with the surface stoichiometry. A significant excess in the measured photoelectron yield is found for the In terminated surfaces. These results are compared to a semiempirical model based on density-functional theory calculations of the surface local densities of states for the As terminated β2-(2×4) and newly predicted ζ-(4×2) reconstructions. The calculations are in good agreement with the measured trends, and provide a basis for the interpretation of threshold photoemission sensor signatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406552
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  • 4
    Electronic Resource
    Electronic Resource
    Excimer laser-assisted metalorganic vapor phase epitaxy of CdTe on GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1434-1436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown CdTe (111) on GaAs (100) at 165 °C using a 248 nm excimer laser to photodissociate dimethylcadmium and diethyltellurium in the gas phase. Good crystalline quality of the layers is confirmed by x-ray diffractometry. Growth rates up to 2 μm/h have been recorded in real time using time-resolved reflectivity. Auger analysis reveals that the films are stoichiometric throughout the thickness of the layer, and that carbon and oxygen contaminants are below the level of detectability. We have used laser-induced fluorescence spectroscopy to examine the photodissociation mechanism of diethyltellurium and have observed a linear dependence of Te atom production on excimer laser power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99137
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  • 5
    Electronic Resource
    Electronic Resource
    Desorption behavior of antimony multilayer passivation on GaAs (001) (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 6067-6072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the desorption behavior of Sb multilayers applied as a passivant to (001) GaAs is presented. Reflection high-energy electron diffraction, reflectivity, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and thermal desorption data reveal unique and complementary information which can be used to monitor the progress of passivant desorption and substrate preparation for subsequent process steps. The data confirm that Sb acts as a robust barrier to surface contamination. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366475
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  • 6
    Electronic Resource
    Electronic Resource
    Reversible modification of CdTe surface composition by excimer laser irradiation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2526-2528 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: KrF excimer laser irradiation of CdTe at fluences below the melt threshold (≤75 mJ/cm2) removes surface layers and produces reversible changes in the surface composition that depend upon the laser fluence and number of laser pulses delivered to the surface. At fluences above ∼40 mJ/cm2 a Te-rich layer is obtained. A stoichiometric composition can be restored by irradiation at reduced laser fluence. The primary desorption products are Cd and Te2, and the velocities of these species are well described by a Maxwellian distribution. The fluence-dependent changes in CdTe surface composition are consistent with a photothermal mechanism based on the competition between formation and desorption of Te2 and desorption of Cd atoms from the laser-irradiated surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103844
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of epitaxial MgO films on Sb-passivated (001)GaAs: Properties of the MgO/GaAs interface (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3588-3590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of epitaxial MgO films on Sb-passivated (001)GaAs using pulsed laser deposition has been investigated. The temperature at which the Sb-passivation layer was desorbed was found to have a significant effect on the interfacial properties of MgO/GaAs heterostructures. Heating the substrates to 350–380 °C in vacuum resulted in a (1×3) GaAs surface reconstruction suitable for the growth of epitaxial MgO films. However, residual Sb was found to persist on the GaAs surface at temperatures as high as 500 °C. MgO growth after Sb desorption at 350–380 °C resulted in a nonuniform interfacial layer which varied in thickness from ∼0.1 to 1.5 nm, whereas substrates heated to 500 °C prior to MgO growth displayed abrupt interfaces. Capacitance–voltage measurements indicated a qualitative difference in the interfacial electronic properties for the two cases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113796
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  • 8
    Electronic Resource
    Electronic Resource
    Photoemission oscillation measurement of barrier thickness for InAs/AlSb resonant tunneling diodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1406-1408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlSb barrier thicknesses ranging from 5 to 12 monolayers have been measured during growth of InAs/AlSb resonant tunneling structures using the photoemission oscillation technique. A plot of peak current density as a function of both measured and estimated barrier thickness confirms that use of the photoemission oscillation technique reduces device performance variations with respect to the conventional time-based approach to layer thickness control. Our growth scheme involves a significant As background pressure during the AlSb growth which results in incorporation of As in the barrier layer. We have modeled the effect of the As incorporation on device properties and find that our measured peak current values are consistent with these calculations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116095
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  • 9
    Electronic Resource
    Electronic Resource
    Measurement of photoemission oscillations during molecular beam epitaxial growth of (001) GaAs, AlAs, AlGaAs, InAs, and AlSb (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3524-3526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission oscillations are observed from (001) GaAs, AlAs, AlGaAs, InAs, and AlSb. The periodicity of the oscillations corresponds to that of reflection high-energy electron diffraction oscillations measured using the same growth conditions. For both methods, the oscillation amplitude is strongly dependent on the substrate temperature, III/V flux ratio, and the nature of the surface on which growth is nucleated for the oscillation measurement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113785
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  • 10
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxial growth of high-quality Cd1−xZnxTe (0≤x≤0.27) films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 322-324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality (001) Cd1−xZnxTe (0≤x≤0.27) films were grown by metalorganic molecular beam epitaxy on (001) GaAs substrates using thermally precracked dimethylcadmium, diethylzinc, and diethyltelluride. Cd1−xZnxTe/GaAs (0≤x≤0.05) films of 6–9 μm thickness exhibited x-ray rocking curve full widths at half-maximum of 200–240 arcsec, and 290–350 arcsec was measured for Cd1−xZnxTe/GaAs (0.09≤x≤0.17). The crystalline quality for the range of x values (0≤x≤0.27) reported here surpasses that previously published in the literature. The 5 K photoluminescence spectra of the Cd1−xZnxTe layers were dominated by strong and sharp bound excitonic transitions. In addition, the free excitonic transition was observed in Cd1−xZnxTe layers with 0≤x≤0.06. Secondary ion mass spectrometry measurements showed that the films were free of O and C contamination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110058
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