PACS: 78.55; 78.65; 79.60
Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
2 in the range of annealing temperatures used. The PL intensity, weight of the Si4+ states, and the volume fraction of Si nanocrystals exhibit a large increase as Ta〉750 °C. The PL peak position is independent of the annealing temperature (Ta). From our observations, the green/blue light emission is related to the defects.
Type of Medium: