ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The quasiballistic model of current-carrier transport in the lightly doped, double-barrier heterostructure AlxGa1−x As-GaAs-AlAs is considered. Electron scattering into the X-valley in the GaAs layer, nonspecular electron reflection from the AlAs layer, and energy quantization in the pre-barrier region are all taken into account. The possibility of an S-shaped current-voltage characteristic in lightly doped, double-barrier heterostructures in the absence of electron-electron collision is demonstrated for a comparatively wide AlAs barrier.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187042
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